期刊
APPLIED PHYSICS LETTERS
卷 94, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3072597
关键词
gallium compounds; high-pressure solid-state phase transformations; III-V semiconductors; thermodynamic properties; wide band gap semiconductors
资金
- Special Funds for Major State Basic Research Project [973(2006CB6049]
- Hi-tech Research Project
- National Natural Science Foundation of China [0721063, 60676057, 60731160628, 60776001, 60820106003]
Determining the spontaneous polarization is a fundamental problem in the III-nitride field. However the experimental value of the spontaneous polarization has not yet been reported. In this study, a thermodynamic model is proposed to investigate the spontaneous polarization of GaN from the GaN high-pressure phase transition. Total macroscopic polarization is directly expressed as coefficients in expansion, and these coefficients are found to be conducted in experiments. The experimental value of the spontaneous polarization of GaN is estimated to be around -0.022 C/m(2).
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