4.6 Article

In-plane anisotropy of polarized photoluminescence in M-plane (1010) ZnO and MgZnO/ZnO multiple quantum wells

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APPLIED PHYSICS LETTERS
卷 94, 期 16, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3124243

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excitons; II-VI semiconductors; magnesium compounds; photoluminescence; semiconductor quantum wells; zinc compounds

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Highly polarized photoluminescence (PL) from M-plane ZnO layers and MgZnO/ZnO quantum wells (QWs) grown on ZnO substrates were observed. The energy difference between PL peaks of E perpendicular to c and E parallel to c corresponded to that between A- and C-excitonic transitions. The polarization degree (P=0.43) at 300 K in QWs was slightly low due to confinement-induced admixture of the P-z orbital to A-excitonic states compared with the ZnO layers (P=0.49). Furthermore, layers with anisotropic compressive strains also showed high polarization anisotropy (P=0.55) at 300 K due to bounded excitonic emissions that reflected the selection rule.

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