期刊
APPLIED PHYSICS LETTERS
卷 94, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3168648
关键词
aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; plasma materials processing; semiconductor device metallisation; wide band gap semiconductors
Enhancement mode AlN/GaN high electron mobility transistors (HEMTs) were fabricated from originally depletion-mode structures using oxygen plasma treatment on the gate area prior to the gate metallization. Starting with a depletion mode AlN/GaN HEMT, the threshold voltage of the HEMT could be shifted from -3.2 to 1 V depending on the oxygen plasma treatment time to partially convert the AlN barrier layer into Al oxide. The gate current was reduced and the current-voltage curves show metal-oxide semiconductor diodelike characteristics after oxygen plasma treatment.
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