期刊
APPLIED PHYSICS LETTERS
卷 94, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3064161
关键词
electroless deposition; elemental semiconductors; energy gap; II-VI semiconductors; nanowires; photodiodes; semiconductor quantum wires; silicon; sputter deposition; zinc compounds
资金
- Ministry of Education for Doctor's Conferment Post [20070486015]
n-ZnO/p-silicon nanowire (SiNW) photodiodes were prepared by radio frequency reactive magnetron sputtering of n-type zinc oxide at room temperature on photoresist filled p-SiNWs, which were fabricated by electroless metal deposition method at 323 K. Our n-ZnO/p-SiNW photodiodes showed good temperature- and light-intensity dependence. They exhibited strong responsivities of 19.2 and 2.5 A/W for 254 and 1000 nm photons, respectively, under a reverse bias of 2 V with a strong peak of responsivity near 390 nm, the wavelength corresponding to the band gap of ZnO. These results present potential applications of n-ZnO/p-SiNW photodetectors in deep ultraviolet and near infrared regions.
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