4.6 Article

Crucial role of doping dynamics on transport properties of Sb-doped SnO2 nanowires

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APPLIED PHYSICS LETTERS
卷 95, 期 5, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3186080

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antimony; doping profiles; electrical resistivity; impurities; nanotechnology; nanowires; pulsed laser deposition; semiconductor doping; semiconductor growth; semiconductor materials; tin compounds

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Impurity doping on semiconductor nanowires grown by vapor-liquid-solid (VLS) mechanism remains an important challenge. Here we demonstrate the importance of doping dynamics to control the transport properties of Sb-doped SnO2 nanowires. Sb doping decreased the resistivity of SnO2 nanowires down to 10(-3) cm range, while there was the lower bound of resistivity even increasing further the dopant concentration from supplied source. We found that the doping limitation is related to the re-evaporation events of dopant through vapor-solid growth process rather than VLS process. Thus understanding the dopant incorporation dynamics is essential to control the transport properties of SnO2 nanowires by impurity doping.

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