期刊
APPLIED PHYSICS LETTERS
卷 95, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3187540
关键词
edge dislocations; gallium compounds; III-V semiconductors; impurities; photoluminescence; semiconductor doping; semiconductor thin films; silicon; wide band gap semiconductors; X-ray diffraction
资金
- National Natural Science Foundation of China [60836003, 60776047]
- National Basic Research Program of China [2007CB936700]
A close relationship is found between the blue and yellow luminescence bands in n-type GaN films, which are grown without intentional acceptor doping. The intensity ratio of blue luminescence to yellow luminescence (I-BL/I-YL) decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray diffraction. In addition, the I-BL/I-YL ratio decreases with the increase in Si doping. It is suggested that the edge dislocation and Si impurity play important roles in linking the blue and yellow luminescence.
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