期刊
APPLIED PHYSICS LETTERS
卷 94, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3119192
关键词
gallium compounds; III-V semiconductors; light emitting diodes; nanofabrication; nanophotonics; vapour deposition; wide band gap semiconductors
资金
- DOE-BES [DE-FG02-06ER46347]
- Sandia National Laboratories
- National Science Council of Republic of China (ROC) in Taiwan
Here we propose and realize a scheme for making a direct contact to a two-dimensional nanorod light-emitting diode (LED) array using the oblique-angle deposition approach. And, more importantly, we demonstrate highly efficient electrical carrier injection into the nanorods. As a result, we show that at a 20 mA dc current injection, the light output power density of our nanorod LED array is 3700 mW cm(-2). More general, this contact scheme will pave the ways for making direct contacts to other kinds of nanoscale optoelectronic devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据