4.6 Article

High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays

期刊

APPLIED PHYSICS LETTERS
卷 94, 期 14, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3119192

关键词

gallium compounds; III-V semiconductors; light emitting diodes; nanofabrication; nanophotonics; vapour deposition; wide band gap semiconductors

资金

  1. DOE-BES [DE-FG02-06ER46347]
  2. Sandia National Laboratories
  3. National Science Council of Republic of China (ROC) in Taiwan

向作者/读者索取更多资源

Here we propose and realize a scheme for making a direct contact to a two-dimensional nanorod light-emitting diode (LED) array using the oblique-angle deposition approach. And, more importantly, we demonstrate highly efficient electrical carrier injection into the nanorods. As a result, we show that at a 20 mA dc current injection, the light output power density of our nanorod LED array is 3700 mW cm(-2). More general, this contact scheme will pave the ways for making direct contacts to other kinds of nanoscale optoelectronic devices.

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