Effects of the alkyl chain length in phosphonic acid self-assembled monolayer gate dielectrics on the performance and stability of low-voltage organic thin-film transistors

标题
Effects of the alkyl chain length in phosphonic acid self-assembled monolayer gate dielectrics on the performance and stability of low-voltage organic thin-film transistors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 95, Issue 20, Pages 203301
出版商
AIP Publishing
发表日期
2009-11-18
DOI
10.1063/1.3259816

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