Cavity-enhanced photocurrent generation by 1.55 μm wavelengths linear absorption in a p-i-n diode embedded silicon microring resonator

We demonstrate 20-fold cavity-enhanced photocurrent generation in 1.55 mu m wavelengths in a p-i-n diode embedded silicon microring resonator with Q factor of 8000. The on-resonance wavelength shows linear responsivity of 0.12 mA/W upon 0 V bias and 0.25 mA/W upon -15 V bias. We attribute the linear absorption to surface-state absorption at the microring waveguide interfaces. Our experiments indicate that the photocurrent generation is linear to the estimated coupled power up to similar to 500 mu W. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3257384]