期刊
APPLIED PHYSICS LETTERS
卷 94, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3148774
关键词
elemental semiconductors; nanostructured materials; silicon; Young's modulus
资金
- Dutch national research program on micro technology, MicroNed [IVC-2]
- NanoNed [TQVB46]
This letter presents the application of electrostatic pull-in instability to study the size-dependent effective Young's Modulus E (similar to 170-70 GPa) of [110] silicon nanocantilevers (thickness similar to 1019-40 nm). The presented approach shows substantial advantages over the previous methods used for characterization of nanoelectromechanical systems behaviors. The E is retrieved from the pull-in voltage of the structure via the electromechanical coupled equation, with a typical error of <= 12%, much less than previous work in the field. Measurement results show a strong size-dependence of E. The approach is simple and reproducible for various dimensions and can be extended to the characterization of nanobeams and nanowires.
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