Electrical and optical properties of p-type InGaN

InGaN/GaN multiple quantum well solar cells with long operating wavelengths

(2009) R. Dahal et al.   APPLIED PHYSICS LETTERS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Thermoelectric Properties of In0.3Ga0.7N Alloys

(2009) B. N. Pantha et al.   JOURNAL OF ELECTRONIC MATERIALS

Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN

(2008) Gon Namkoong et al.   APPLIED PHYSICS LETTERS

High hole concentration in Mg-doped a-plane Ga1−xInxN (0

(2008) Daisuke Iida et al.   APPLIED PHYSICS LETTERS

Direct hydrogen gas generation by using InGaN epilayers as working electrodes

(2008) J. Li et al.   APPLIED PHYSICS LETTERS