4.6 Article

Temperature dependent charge-injection at the metal-organic semiconductor interface and density of states in pristine and doped pentacene

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APPLIED PHYSICS LETTERS
卷 94, 期 25, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3159835

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contact resistance; interface states; organic semiconductors; organometallic compounds; reduction (chemical); semiconductor doping; semiconductor thin films; thin film transistors

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The authors study temperature dependent electrical transport in pristine and tetrafluorotetracyanoquinodimethane (F(4)TCNQ)-doped pentacene to explore the physical mechanism of the doping-induced reduction in the contact resistance at the metal-organic semiconductor interface. It was found that the F(4)TCNQ-doping induces an apparent lowering of the hole injection barrier at gold-pentacene interfaces. In addition, characteristic changes in the density of states (DOS) induced by the F(4)TCNQ-doping in a thin-film transistor geometry have been observed. The correlation between the doping-induced DOS and the carrier injection process is discussed.

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