期刊
APPLIED PHYSICS LETTERS
卷 95, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3174916
关键词
doping profiles; electrical conductivity; electronic structure; high-temperature effects; lanthanum compounds; multiferroics; nickel compounds; pulsed laser deposition; strongly correlated electron systems; strontium compounds; thin films; valence bands; X-ray absorption spectra; X-ray photoelectron spectra
资金
- E.U. MIRG [2006-042095]
- Swiss NSF [200021-116688]
- Erciyes University research fund [FBA-07-041]
- Office of Science/BES, of the U.S. DoE [DE-AC02-05CH11231]
Reversible and irreversible discontinuities at around 573 and 823 K in the electric conductivity of a strained 175 nm thin film of (La0.8Sr0.2)(0.95)Ni0.2Fe0.8O3-delta grown by pulsed laser deposition on SrTiO3 (110) are reflected by valence band changes as monitored in photoemission and oxygen K-edge x-ray absorption spectra (XAS). The irreversible jump at 823 K is attributed to depletion of doped electron holes concomitant with reduction of Fe3+ toward Fe2+, as evidenced by oxygen and iron core level soft XAS, and possibly of a chemical origin, whereas the reversible jump at 573 K possibly originates from structural changes.
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