期刊
APPLIED PHYSICS LETTERS
卷 94, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3157842
关键词
nanowires; semiconductor lasers; stimulated emission; tin compounds; wide band gap semiconductors
资金
- [LKYPDF2/08]
Although nanostructured SnO2 exhibited ultraviolet stimulated emission at room temperature, the low emission intensities and occurrence of gain saturation restricted them to be considered as luminescent materials for semiconductor lasers. In this letter, we find that a large ultraviolet excitonic gain can be obtained from SnO2 nanowires coated with an amorphous layer. Under effective pumping, ultraviolet coherent random lasing can be realized from randomly assembled SnO2 nanowires at room temperature.
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