期刊
APPLIED PHYSICS LETTERS
卷 94, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3130228
关键词
aluminium compounds; buffer layers; gallium compounds; III-V semiconductors; leakage currents; molecular beam epitaxial growth; mosaic structure; nucleation; plasma deposition; power HEMT; secondary ion mass spectra; semiconductor epitaxial layers; wide band gap semiconductors; X-ray diffraction
资金
- ONR MINE MURI
- DARPA CNID
- NSF MRSEC [DMR05-20415]
- UCSB Nanofabrication Facility
We investigated the effect of AlN nucleation layers (NLs) on the structural and electrical properties of N-face GaN grown on C-face 6H-SiC substrates by plasma-assisted molecular beam epitaxy. The GaN films were characterized by secondary ion mass spectroscopy, x-ray diffraction, and transistor electrical measurements. It was found that an AlN NL grown in the N-rich regime was essential for realizing highly resistive GaN buffers. The mosaic structure of the GaN epilayers was systematically correlated with the AlN nucleation conditions. N-face high electron mobility transistors fabricated on these low-leakage buffers demonstrated the highest output power density at 4 GHz to date of 8.1 W/mm with an associated power-added efficiency of 54%.
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