Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition

出版年份 2009 全文链接

标题

Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition

作者

关键词

-

出版物

APPLIED PHYSICS LETTERS

Volume 95, Issue 22, Pages 223303

出版商

AIP Publishing

发表日期

2009-12-03

DOI

10.1063/1.3269579

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