期刊
APPLIED PHYSICS LETTERS
卷 95, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3269604
关键词
atomic force microscopy; carrier mobility; electrodes; hydrophilicity; hydrophobicity; ink jet printing; organic semiconductors; semiconductor thin films; stress effects; synthetic metals; thin film transistors
资金
- New Energy and Industrial Technology Development Organization (NEDO), Japan
We report the relationship between the device instability and the presence of hydrophilic/hydrophobic boundary that is conventionally utilized to obtain well-defined film patterning in printed electronics devices. Pentacene thin-film transistors composed of inkjet-printed synthetic-metal electrodes exhibit notable bias stress effects whose appearance and disappearance depend critically on the positioning of the hydrophilic/hydrophobic boundary within the channel. The Kelvin probe force microscopy measurements revealed that the bias-stress effect is originated in the temporal evolution of trapped charge densities accumulated at the hydrophilic/hydrophobic boundary, in which the mobile nature of trap agents on the hydrophilic surface take crucial role.
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