Article
Nanoscience & Nanotechnology
Ville Lahteenlahti, Alejandro Schulman, Azar Beiranvand, Hannu Huhtinen, Petriina Paturi
Summary: The study reported on the resistive switching properties of Al/Gd1-xCaxMnO3 (GCMO)/Au thin-film memristors, showing that the RS properties are highly dependent on Ca substitution with optimal performance near x=0.9. An equivalent circuit model revealed that the devices' electrical conduction properties are dominated by the Poole-Frenkel conduction mechanism, with lower trap energy values associated with better RS properties. This suggests that the main RS properties of Al/GCMO/Au devices are comparable to those of other similar manganite-based materials, but with marked differences in switching behavior, potentially leading to further exploration of mixed-valence perovskite manganites for RS applications.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Physics, Applied
Prakash P. Sundaram, Fengdeng Liu, Fikadu Alema, Andrei Osinsky, Bharat Jalan, Steven J. Koester
Summary: This paper presents a systematic study of Schottky barrier diodes fabricated on Si-doped homoepitaxial β-Ga2O3 thin films grown on Sn-doped (001) and (010) β-Ga2O3 substrates by MOCVD. The study includes X-ray diffraction analysis, current density-voltage data, and C-V measurements. The diode characteristics, such as ideality factor, barrier height, onresistance, and breakdown voltage, are analyzed. The temperature dependence (170-360K) of the ideality factor, barrier height, and Poole-Frenkel reverse leakage mechanism are also studied.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Andrea Orsini, Daniele Barettin, Sara Pettinato, Stefano Salvatori, Riccardo Polini, Maria Cristina Rossi, Alessandro Bellucci, Eleonora Bolli, Marco Girolami, Matteo Mastellone, Stefano Orlando, Valerio Serpente, Veronica Valentini, Daniele Maria Trucchi
Summary: A recent innovation in diamond technology involves the development of black diamonds (BD), which have high optical absorption due to processing with a femtosecond laser. This study investigates the optical behavior of BD samples and demonstrates a near zero dielectric permittivity under high electric field conditions, exhibiting the Frenkel-Poole effect. The discovery of such zero-epsilon materials (ENZ) is expected to significantly advance integrated photonic devices and optical interconnections, leading to the development of novel functional photonic devices based on BD.
Article
Engineering, Electrical & Electronic
N. Arun, S. V. S. Nageswara Rao, A. P. Pathak
Summary: In this paper, the resistive switching characteristics of HfO2-based metal-insulator-metal structures with four different metal bottom electrode materials (Au, Al, Pt, and Cu) are systematically investigated. It is found that Au and Pt have lower set and reset voltages, while Pt has a higher resistance ratio (R-off/R-on) of about 10(5). On the other hand, Al and Cu exhibit multilevel switching during the reset process. The oxygen affinity of the bottom electrode is expected to result in the formation of an interfacial layer with the active (HfO2) layer. Furthermore, the conduction mechanisms in the high resistance state (HRS) curves of these devices are studied, and the dominance of the Poole-Frenkel effect at higher voltages (> 1 V) in the HRS curve is observed.
JOURNAL OF ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Alexander Gutsche, Sebastian Hambsch, Nuno Casa Branca, Regina Dittmann, Stefan Scholz, Joachim Knoch
Summary: This study provides a mathematical model for the dynamics of area-dependent memristive devices based on Al/Pr0.7Ca0.3MnO3 (PCMO) stacks. The two resistors in the model are assigned to the AlOx layer and the depletion zone at the Pr0.7Ca0.3MnO3 layer, respectively. The resistance change is attributed to oxygen migration between the AlOx and the PCMO depletion zone, with significant differences observed between polycrystalline and single crystalline samples. In addition, volatile subloops in the current-voltage curves are explained as the injection of electrons into traps within the AlOx barrier.
PHYSICAL REVIEW MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Q. X. Zhang
Summary: The AZSZA metal-insulator-metal (MIM) capacitors prepared by atomic-layer-deposition technique showed improved quadratic capacitance voltage coefficients when the thickness of SiO2 was increased. The leakage current density was low for the SiO2=3nm sample, and the conduction mechanism at high field was dominated by Poole Frenkel emission.
INTEGRATED FERROELECTRICS
(2021)
Article
Materials Science, Multidisciplinary
Karuna Kumari, S. Majumder, Ajay D. Thakur, S. J. Ray
Summary: This work investigates the temperature-dependent transport and resistive switching behavior of a hybrid structure composed of LCMO and rGO. The non-linear IV characteristics across the temperature range, with the most prominent memristive effect at 200K, suggest a potential for use in electronic devices. The charge transport mechanisms in the SET and RESET processes can be explained by trap-controlled space charge limited conduction and Poole-Frenkel emission at different temperatures.
Article
Physics, Multidisciplinary
Soumyajyoti Mallick, Dibakar Roy Chowdhury
Summary: This study demonstrates the use of stacked dipole resonators and a vanadium dioxide film to achieve stronger field confinement and tunable metasurfaces in the terahertz frequency range. The insulator-to-metal transition in the vanadium dioxide spacer layer is realized under intense terahertz excitation, leading to adjustable frequency and amplitude metasurfaces. The enhanced field confinement triggers increased conductivity in the vanadium dioxide layer, enabling the development of active metamaterial devices in the terahertz domain.
Article
Chemistry, Multidisciplinary
Hei Wong, Kuniyuki Kakushima
Summary: This work reports the phenomenon of lateral Poole-Frenkel current conduction along the dielectric/Si interface of a silicon nanowire MOS transistor for the first time. This discovery has significant impact on device characteristic modeling and reliability, and introduces a new type of electronic device - the Poole-Frenkel emission MOS transistor. The PF-MOS utilizes the high defect state Si/dielectric interface layer as the conduction channel and is expected to have unique features.
Article
Materials Science, Multidisciplinary
Jamal Aziz, Honggyun Kim, Shania Rehman, Ji-Hyun Hur, Yun-Heub Song, Muhammad Farooq Khan, Deok-kee Kim
Summary: This study investigates the Poole-Frenkel induced threshold switching characteristics of niobium dioxide films through tuning oxygen stoichiometry. By choosing tungsten as the top electrode and altering oxygen flux during deposition, Nb2O5 is successfully transformed into NbO2, leading to stable threshold switching with good thermal stability. Increasing O-2 flux during deposition results in enhanced selectivity, threshold voltage, and off-state resistance in these devices, making them suitable for RRAM and neuromorphic computing applications.
MATERIALS RESEARCH BULLETIN
(2021)
Article
Engineering, Electrical & Electronic
Sanghyun Ban, Sangmin Lee, Jangseop Lee, Hyunsang Hwang
Summary: This study comprehensively investigated the effect of Si doping on a boron-tellurium based binary ovonic threshold switch (OTS). Si doping improved the off-leakage current, drift characteristics, and threshold voltage of the OTS. Raman spectroscopy revealed the mechanism behind the electrical changes caused by Si doping. Optical bandgap and X-ray diffraction analysis confirmed the improvement in performance due to Si doping.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Hogyoung Kim, Ha Young Lee, Byung Joon Choi
Summary: Vertical Pt Schottky contacts to bulk GaN single crystal with an ultrathin Gd2O3 interlayer grown by atomic layer deposition were electrically characterized using temperature dependent current-voltage (I-V-T) and capacitance-voltage (C-V) measurements. The results showed temperature dependence of barrier height and dominant transport mechanism for reverse leakage current as Poole-Frenkel emission with a trap energy of 0.78 eV. Evaluation from C-V data indicated Gd2O3 as a promising passivation layer due to low interface state density.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2021)
Article
Nanoscience & Nanotechnology
Supawan Ngamprapawat, Tomonori Nishimura, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio
Summary: The difficulty of current injection into single-crystalline hexagonal boron nitride (h-BN) has been overcome by forming contacts through Ar plasma treatment, Ni/Au metal deposition, and high-temperature annealing. This contact formation method shows potential for the development of high-performance h-BN-based devices.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Adel M. El Sayed, S. Saber
Summary: In this study, high purity NiO nanoparticles were prepared and introduced into a CMC-PVP blend. The results showed that the dispersion of NiO nanoparticles inside the blend and their complexation with the functional groups in the blend influenced the film structure. The introduction of NiO nanoparticles also resulted in reduced transparency and modified reflectivity of the films. Additionally, the NiO nanoparticles improved the conductivity and refractive index of the films.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
(2022)
Article
Physics, Applied
A. P. Abdullayev, R. M. Rzayev, T. G. Naghiyev, J. P. Mammadova, S. S. Aliyev, I. V. Musazade
Summary: Single crystals of TlGaTe2 were grown using the Bridgman method. Current-voltage characteristics were measured, revealing the presence of the Poole-Frenkel effect in the nonlinear region along both the parallel and perpendicular crystallographic axes. The concentration of ionized centers (N-t), mean free path (lambda), Frenkel coefficient (beta), and shape of the potential well in TlGaTe2 crystals were calculated.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
(2023)
