期刊
APPLIED PHYSICS LETTERS
卷 95, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3259929
关键词
cadmium compounds; charge injection; colloids; electron affinity; II-VI semiconductors; nanostructured materials; semiconductor quantum dots; titanium compounds; wide band gap semiconductors; zinc compounds
资金
- Korea government (MEST) [R01-2008-000-20756-0]
- Korea Research Foundation [KRF-2009-013-D00056, KRF-2006-331-D00260]
- National Center for Electron Microscopy
- Lawrence Berkeley Laboratory
- U. S. Department of Energy [DE-AC02-05CH11231]
- National Research Foundation of Korea [2006-331-D00260, R01-2008-000-20756-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Charge memory characteristics have been systematically studied based on colloidal CdSe/ZnS nanocrystal quantum dots (QDs) embedded in similar to 50 nm-thick TiO2 film. Ligand-capped QDs showed negligible electron charging effect, implying that the electron affinity of QDs was significantly decreased by surface dipole layer surrounding QDs. In contrast, the hole charging was affected by the carrier injection blocking effect of the surface ligands. Efficient electron and hole charging characteristics were realized by removing the surface ligands via H-2 plasma treatment.
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