期刊
APPLIED PHYSICS LETTERS
卷 94, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3139761
关键词
aluminium; anodes; electroforming; metal-insulator boundaries; plasma materials processing; stacking faults; strontium compounds; titanium compounds; transmission electron microscopy
资金
- Swiss National Science Foundation
- NCCR MaNEP
The electroformation and resistance switching behavior of Al/SrTiO3-xNy/Al have been investigated. The resistance of Al/SrTiO3-xNy/Al irreversibly increases when voltages higher than a certain threshold voltage are applied. A bistable resistance switching develops at one of the Al electrodes that performs as the anode. The formation of stacking faults in SrTiO3-xNy during preparation by microwave plasma treatment is a prerequisite for the occurrence of switching as confirmed by site-specific high resolution transmission electron microscopy at the electrode interfaces. The resistance switching effect is discussed by considering the role of stacking fault defects in the oxygen/nitrogen diffusion at the anode metal-oxynitride interface.
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