Electronic, magnetic, and physical structure of cobalt deposited on aluminum tris(8-hydroxy quinoline)

The role of aluminum oxide buffer layer in organic spin-valves performance

(2009) Y. Q. Zhan et al.   APPLIED PHYSICS LETTERS

Effects of carrier mobility and morphology in organic semiconductor spin valves

(2009) Yaohua Liu et al.   JOURNAL OF APPLIED PHYSICS

Correlation between microstructure and magnetotransport in organic semiconductor spin-valve structures

(2009) Yaohua Liu et al.   PHYSICAL REVIEW B

Direct evidence of Al diffusion into tris-(8-hydroquinoline) aluminum layer: medium energy ion scattering analysis

(2008) Jung Han Lee et al.   APPLIED PHYSICS LETTERS

Low temperature tunneling magnetoresistance on (La,Sr)MnO3∕Co junctions with organic spacer layers

(2008) H. Vinzelberg et al.   JOURNAL OF APPLIED PHYSICS

Investigation of the Interfaces of Tris-(8-hydroxyquinoline) Aluminum with Ag and Al Using Surface Raman Spectroscopy

(2008) Robert J. Davis et al.   Journal of Physical Chemistry C

Energy level alignment and chemical interaction atAlq3/Cointerfaces for organic spintronic devices

(2008) Y. Q. Zhan et al.   PHYSICAL REVIEW B

Absence of spin transport in the organic semiconductorAlq3

(2008) J. S. Jiang et al.   PHYSICAL REVIEW B

Room-temperature spintronic effects inAlq3-based hybrid devices

(2008) V. Dediu et al.   PHYSICAL REVIEW B