期刊
APPLIED PHYSICS LETTERS
卷 94, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3067861
关键词
dark conductivity; elemental semiconductors; II-VI semiconductors; mercury compounds; nanoparticles; ohmic contacts; photoconductivity; p-n heterojunctions; semiconductor quantum wires; semiconductor thin films; silicon; wide band gap semiconductors; zinc compounds
资金
- Center for IntegratedNano-Systems (CINS) of the Korea Research Foundation [KRF-2006-005-J03601]
- Medium-term Strategic Technology Development Program
- SystemIC2010 project of the Korea Ministry of Commerce, Industry and Energy
- Korea Science and Engineering Foundation (KOSEF)
- National Research Laboratory Program [R0A-2005-000-10045-0]
- Nano R D Program [M10703000980-08M0300-98010]
- National Research Foundation of Korea [R0A-2005-000-10045-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We demonstrate a pn heterojunction diode constructed with a n-type ZnO nanowire (NW) and a p-type HgTe nanoparticle (NP) thin film on a SiO2/p-Si substrate. For the pn heterojunction diode, the rectifying characteristics of both the dark current and the photocurrent excited by 633 nm wavelength light were observed, but the photocurrent excited by 325 nm wavelength light possesses Ohmic characteristics. The optoelectronic characteristics of the pn heterojunction diode were compared with those of the ZnO NW and HgTe NP thin film composing it.
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