Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

InAs nanowire metal-oxide-semiconductor capacitors

(2008) Stefano Roddaro et al.   APPLIED PHYSICS LETTERS

Quantum dot based nanophotonics and nanoelectronics

(2008) D. Bimberg   ELECTRONICS LETTERS

An InP-Based Quantum-Dot Tunable Three-Section Distributed Bragg Reflector Laser

(2008) D. J. Robbins et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique

(2008) M. Larsson et al.   JOURNAL OF APPLIED PHYSICS

Landé-like formula for thegfactors of hole-nanowire subband edges

(2008) D. Csontos et al.   PHYSICAL REVIEW B

Effect of sulfur passivation on the InP surface prior to plasma-enhanced chemical vapor deposition of SiNx

(2008) Hengjing Tang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY