4.6 Article

Light-emission mechanism of thermally annealed silicon-rich silicon oxide revisited: What is the role of silicon nanocrystals?

期刊

APPLIED PHYSICS LETTERS
卷 94, 期 4, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3064124

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annealing; crystal defects; photoluminescence; Raman spectra; silicon compounds; time resolved spectra; X-ray photoelectron spectra

资金

  1. Finnish Centre of Excellence Computational Molecular Science
  2. FinNano Program (OPNA)

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The experimental data obtained with Raman, x-ray photoelectron, and continuous-wave and time-resolved photoluminescence spectroscopies on silicon-rich silicon oxide samples with different O/Si ratios and annealing temperatures are analyzed. It is shown that Si grains, with atoms bound as in bulk Si, are not the direct emitting phase, which is in agreement with the model of localized light-emitting centers. These oxygen-defect centers probably locate in suboxide structures and the excitation migrates to them from the absorbing Si grains. The photoluminescence quantum yield strongly increases for samples with larger O/Si ratios, suggesting a nonradiative capture of migrating excitons in Si grains.

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