Over 10 GHz lateral silicon photodetector fabricated on silicon-on-insulator substrate by CMOS-compatible process

出版年份 2015 全文链接

标题

作者

关键词

出版物

Volume 54, Issue 4S, Pages 04DG06

出版商

Japan Society of Applied Physics

发表日期

2015-03-16

DOI

10.7567/jjap.54.04dg06

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now