期刊
APPLIED PHYSICS LETTERS
卷 94, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3097232
关键词
dielectric polarisation; elasticity; gallium compounds; III-V semiconductors; indium compounds; piezoelectricity; semiconductor quantum dots; spin-orbit interactions; valence bands; wide band gap semiconductors
A symmetry analysis and a semianalytical exact model are proposed to describe the mechanical, piezoelectric, and electronic properties of strained wurtzite quantum nanostructures with axial symmetry. An expression of the piezoelectric polarization is given as a function of inhomogeneous strains. The three-dimensional 8x8 strained kp Hamiltonian is reduced to two-dimensional using the total angular momentum representation. When the spin-orbit coupling is neglected, the Hamiltonians are reduced to 1x1 and 3x3 Hamiltonians for the states in the S-shell. For all the other shells, the fourfold degeneracy is demonstrated. Simulations are performed for InN/GaN quantum dots.
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