First-principles study of the electronic properties of Ge dangling bonds at (100)Si1−xGex/SiO2 interfaces

Valence band energy in confined Si1−xGex (0.28

(2009) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

First-principles investigation of the electron spin resonance parameters of germanium interfacial dangling bond centers

(2009) K. Sankaran et al.   APPLIED PHYSICS LETTERS

Electron spin resonance observation of an interfacial GePb1-type defect in SiO2/(100)Si1−xGex/SiO2/Si heterostructures

(2009) A Stesmans et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

High-Hole-Mobility Silicon Germanium on Insulator Substrates with High Crystalline Quality Obtained by the Germanium Condensation Technique

(2009) L. Souriau et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Nontrigonal Ge dangling bond interface defect in condensation-grown(100)Si1−xGex/SiO2

(2009) A. Stesmans et al.   PHYSICAL REVIEW B

Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator

(2008) Haigui Yang et al.   APPLIED PHYSICS LETTERS

Ge 3d core-level shifts at (100)Ge∕Ge(Hf)O2 interfaces: A first-principles investigation

(2008) G. Pourtois et al.   APPLIED PHYSICS LETTERS

First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf)

(2008) M. Houssa et al.   APPLIED PHYSICS LETTERS

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

(2008) D. P. Brunco et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Defect levels of dangling bonds in silicon and germanium through hybrid functionals

(2008) Peter Broqvist et al.   PHYSICAL REVIEW B