期刊
APPLIED PHYSICS LETTERS
卷 95, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3232234
关键词
-
资金
- Spanish MEC [TEC2007-66955, HU2006-0022]
- Austrian Exchange Service [ES 17/2007]
- Austrian Science Fund (FWF) [P19636N20]
Conductive atomic force microscopy has been used to investigate the effect of atomic hydrogen and step orientation on the growth behavior of InAs on GaAs (110) misoriented substrates. Samples grown by conventional molecular beam epitaxy exhibit higher conductivity on [1 (1) over bar0]-multiatomic step edges, where preferential nucleation of InAs nanowires takes place by step decoration. On H-terminated substrates with triangular terraces bounded by [1 (1) over bar5]-type steps, three-dimensional InAs clusters grow selectively at the terrace apices as a result of a kinetically driven enhancement in upward mass transport via AsHx intermediate species and a reduction in the surface free energy. (C) 2009 American Institute of Physics. [doi:10.1063/1.3232234]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据