期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 54, 期 9, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.54.094302
关键词
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资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [NRF-2015R1A2A2A01007289]
- National Research Foundation of Korea [2015R1A2A2A01007289] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We present a novel device architecture for low set and reset currents in phase change random access memory (PCRAM). In this structure, the sidewall of phase-change film is contacted with the vertical heating layer. In particular, to realize a small contact area of under 50 nm(2) for low reset current, this structure includes stacked layers consisting of extremely thin phase change material (PCM) and conduction films, the fabrication method of which is proposed. We estimated set and reset currents for the proposed structure by the device simulation method. Here, we confirmed that a contact area of 30 nm(2) in this structure, where Ge2Sb2Te5 is used as PCM, provides a reset current of 13.5 mu A and a set current of 4 mu A, which are promising for the scaling down of PCM. Furthermore, it is confirmed that the thinner PCM in this structure provides less thermal disturbance to the neighboring cell. From the results, we expect this structure to be a promising candidate for a high-density nonvolatile memory architecture with PCM. (C) 2015 The Japan Society of Applied Physics
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