p-type field-effect transistor of NiO with electric double-layer gating

标题
p-type field-effect transistor of NiO with electric double-layer gating
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 92, Issue 24, Pages 242107
出版商
AIP Publishing
发表日期
2008-06-20
DOI
10.1063/1.2939006

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