Continuous wave operation of diode lasers at 3.36 μm at 12 °C

GaSb-based type-I quantum-well diode lasers emitting at 3.36 mu m at 12 degrees C with 15 mW of continuous wave output power are reported. Devices with two or four InGaAsSb compressively strained quantum wells and AllnGaAsSb quintemary barriers were fabricated and characterized. It was shown that increase in the quantum-well number led to improved laser differential gain and reduced threshold current. (c) 2008 American Institute of Physics.