Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy

标题
Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 93, Issue 3, Pages 033106
出版商
AIP Publishing
发表日期
2008-07-25
DOI
10.1063/1.2960341

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