Formation of a manganese oxide barrier layer with thermal chemical vapor deposition for advanced large-scale integrated interconnect structure

Advanced large-scale integrated interconnect structure faces a major challenge in forming a thin and conformal diffusion barrier layer. We deposited a Mn oxide layer by thermal chemical vapor deposition (CVD) on SiO(2) substrates and investigated deposition behavior and diffusion barrier property. A thin Mn oxide layer was formed with a uniform thickness of 2.6-10 nm depending on deposition temperature between 100 and 400 degrees C. Heat-treated samples of Cu/CVD-Mn oxide/SiO(2) indicated no interdiffusion at 400 degrees C for 100 h. The CVD of the Mn oxide layer was found to be an excellent barrier formation process.