4.6 Article

Single impact crater functions for ion bombardment of silicon

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APPLIED PHYSICS LETTERS
卷 92, 期 13, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2905297

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The average effect of a single 500 eV incident argon ion on a silicon surface is studied using molecular dynamics simulations. More than 10(3) ion impacts at random surface points are averaged for each of seven incidence angles, from 0 degrees to 28 degrees off normal, to determine a local surface height change function, or a crater function. The crater shapes are mostly determined by mass rearrangement; sputtering has a relatively small effect. Analytical fitting functions are provided for several cases, and may serve as input into kinetic Monte Carlo calculations or stability analyses for surfaces subjected to ion bombardment. (C) 2008 American Institute of Physics.

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