4.6 Article

Ferromagnetism induced by defect complex in Co-doped ZnO

期刊

APPLIED PHYSICS LETTERS
卷 93, 期 13, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2995997

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资金

  1. National Natural Science Foundation of China [50425102, 50601021, 50701038, 60776014, 60876002, 10804096]
  2. China Postdoctoral Science Foundation [20070421158]
  3. Zhejiang University-Helmholtz cooperation fund, and the Ministry of Education of China

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The effect of Al donor and O vacancy (V(O)) on the magnetic properties of Co-doped ZnO has been studied by first-principles calculations. It is found that only Al donor cannot induce ferromagnetism (FM) in Co-doped ZnO but can provide additional electrons, which results in the enhancement of Fermi level. The presence of V(O) makes the Co empty 3d-t(2g) minority state broadened, and a t(2g)-V(O) hybrid level at the conduction band minimum forms. The combination of Al donor and V(O) results in a charge transfer to the Co empty 3d-t(2g) minority states, which induces a strong carrier-mediated FM interaction. Our results give an explanation for the controversial magnetic properties of (Co, Al)-codoped ZnO reported in the literature. (C) 2008 American Institute of Physics.

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