Article
Materials Science, Multidisciplinary
Behnam Zeinalvand Farzin, DongKun Lee, Geun Hyeong Kim, Jaedu Ha, Jong Su Kim, Yeongho Kim, Sang Jun Lee
Summary: This study investigates the limitations and effects on critical parameters of the chopping frequency in photoreflectance spectroscopy using the method of analyzing the phase diagram of the spectrum.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2022)
Article
Chemistry, Multidisciplinary
Bogdan R. R. Borodin, Prokhor A. A. Alekseev, Vladislav Khayrudinov, Evgeniy Ubyivovk, Yury Berdnikov, Nickolay Sibirev, Harri Lipsanen
Summary: Control over doping at the nanoscale during nanostructure growth is crucial for device fabrication. This study investigates the p (Zn)- and n (Sn)- doping distributions and the formation of 3D p-n junctions in planar GaAs nanowires grown on doped GaAs substrates. Various techniques, including scanning electron microscopy, transmission electron microscopy, and conductive atomic force microscopy, are used to analyze the nanowire morphology and doping distribution. The results show that bipolar transistor-like lateral nanostructures can be formed during p-n or n-p growth on misoriented (001) GaAs substrates, while core-shell field effect transistor-like structures can be synthesized on singular (001) substrates. The effects of substrate misorientation on 3D doping distribution are attributed to the preferential incorporation of dopants in polar side facets compared to a non-polar top (001) facet.
Article
Materials Science, Multidisciplinary
Yubin Kang, Jilong Tang, Fahad Azad, Xiaotian Zhu, Xue Chen, Xueying Chu, Dengkui Wang, Xuan Fang, Dan Fang, Fengyuan Lin, Kexue Li, Xiaohua Wang, Zhipeng Wei
Summary: Controlling the crystal structure of GaAs nanowires with Si doping and V/III ratio has been shown to influence the nucleation of ZB phase and result in different conductivity types in FET devices. These results provide a clear route towards nanoscale device fabrication.
Article
Engineering, Electrical & Electronic
Sukru Karatas
Summary: The research analyzed the capacitance-voltage, conductance-voltage, and series resistance-voltage properties of Au/n-type GaAs metal-semiconductor structures under different temperatures and voltages, and observed negative capacitance behavior in the forward bias region.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Chemistry, Physical
Cheuk Kai Gary Kwok, Ying Wang, Xingyu Shu, Kin Man Yu
Summary: p-Type SnO can be oxidized into n-type SnO2, and we successfully fabricated an all-Tin Oxide transparent pn quasi-homojunction. Comparison with a p-SnO/n-ZnO heterojunction showed similar rectification behavior. XPS measurements revealed type II band offsets in both SnO2 and ZnO at the Gamma point, with respective valence band (conduction band) offsets of 2.8 eV (1.9 eV) and 2.4 eV (1.33 eV). The SnO/SnO2 p-n structure exhibited reasonable rectification with an ideality factor of -12.3, suggesting potential applications in transparent p-n junction devices.
APPLIED SURFACE SCIENCE
(2023)
Article
Polymer Science
Catalin-Paul Constantin, Gabriela Lisa, Mariana-Dana Damaceanu
Summary: Three new aromatic polyimides were synthesized and characterized, showing advantageous solubility in polar solvents and good thermal stability. Their photo-optical activity was finely modulated by the electron-accepting strength, leading to their behavior as n-type materials and suitability for p-n heterojunctions. Prototype diodes realized with these polyimides exhibited good rectification properties and tunneling phenomenon as the main charge transport mechanism, making them promising candidates for advanced optoelectronic applications.
Article
Chemistry, Physical
Adriano Panepinto, Arnaud Krumpmann, David Cornil, Jerome Cornil, Rony Snyders
Summary: The study found that ion implantation can transform nitrogen-doped TiO2 material into an efficient hole transport layer, reducing electron-hole recombination processes and allowing for control over optical and electrical properties.
APPLIED SURFACE SCIENCE
(2021)
Article
Nanoscience & Nanotechnology
Ulrike Heitmann, Johan Westraadt, Jacques O'Connell, Leonie Jakob, Frank Dimroth, Jonas Bartsch, Stefan Janz, Jan Neethling
Summary: This study analyzed the growth mechanism of sprayed ZnO:In and investigated the contact resistivity between sprayed IZO and n-type poly-Si and p-type GaAs. The results suggest that oxidic interlayers contribute to the higher contact resistivity observed.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Shifeng Li, Leiyang Wang, Bang Wu, Dingyi Guo, Yunfan Li, Yilin Zhao, Gary J. Cheng, Feng Liu
Summary: In this article, a 40-W X-band monolithic GaAs balanced limiter is fabricated using GaAs p-i-n technology. Various techniques such as rounded rectangular p-i-n diode, Lange coupler with widened crossover wires, reasonable thickness I-layer, and optimized isolated terminal resistance are employed to improve the power-handling capability of the limiter. The experimental results demonstrate that the limiter exhibits excellent small-signal performance with an insertion loss of less than 1.2 dB and input/output return losses of less than -20 dB. Moreover, it can handle a maximum power of more than 40 W while maintaining an output power of less than 20 dBm, making it highly suitable for high-power X-band communication systems.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Chemistry, Physical
Wenqing Song, Xinmiao Li, Ruihua Fang, Lei Zhang
Summary: This study demonstrates memristive behaviors in single-layer oxide-based devices, where the conduction states can be modulated by different pulses or voltage sweeps. The p-CuAlO2 and n-ZnO-based memristors show opposite dependence on bias polarity with the help of tip electrode, which may be attributed to the opposite oxygen concentration dependence of p-type and n-type semiconductor materials.
Article
Energy & Fuels
Di Kang, Hang Cheong Sio, Josua Stuckelberger, Di Yan, Sieu Pheng Phang, Rong Liu, Thien N. Truong, Tien Le, Hieu T. Nguyen, Xinyu Zhang, Daniel Macdonald
Summary: This study compares the firing response of ex-situ doped p- and n-type polysilicon passivating contacts and identifies mechanisms underlying their distinct firing behavior. It is found that p-type poly-Si exhibits greater firing stability and is less affected by firing temperature compared to n-type poly-Si. The difference in firing impact is attributed to the different effective hydrogen diffusivity of p- and n-type poly-Si.
PROGRESS IN PHOTOVOLTAICS
(2022)
Article
Chemistry, Multidisciplinary
Joseph-Hang Leung, Hong-Thai Nguyen, Shih-Wei Feng, Sofya B. Artemkina, Vladimir E. Fedorov, Shang-Chin Hsieh, Hsiang-Chen Wang
Summary: P-type and N-type photoelectrochemical biosensors were established in the laboratory to discuss the correlation between characteristic substances and photoactive material properties through the photogenerated charge carrier transport mechanism. Results showed that smaller photocurrent was measured in cases with advanced cancer stages, and glutathione and glutathione disulfide carry out redox reactions during carrier separation, changing the photocurrent.
Article
Chemistry, Physical
V. M. Mikoushkin, E. A. Makarevskaya, D. E. Marchenko
Summary: Low-energy nitrogen ion implantation was used to modify the electronic structure and chemical composition of the n-GaAs surface, resulting in the formation of a p-n structure with a GaAs1-xNx alloy layer. This nano-heterostructure is expected to have attractive properties for infrared applications, without the need for wet lithography.
APPLIED SURFACE SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Dae-Myeong Geum, Seong Kwang Kim, Hyeong-Rak Lim, Juhyuk Park, Jaeyong Jeong, Jae Hoon Han, Won Jun Choi, Hyo-Jin Kim, Sanghyeon Kim
Summary: By systematically investigating the wafer-bonded interfaces of p(+)GaAs/n(+)InGaAs and p(+)InGaAs/n(+)InGaAs, it was found that the latter structure exhibited improved interfacial resistivity. The low-temperature bonding process successfully fabricated bonded interfaces without degrading material quality, suggesting good electrical properties in wafer-bonded structures.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Chemistry, Physical
Shaochang Song, Yuyang Huang, Yu-Chih Tseng, Suneesh Meledath Valiyaveettil, Kuei-Hsien Chen, Yurij Mozharivskyj
Summary: The study successfully converted an n-type Co4Ge6Te6 into a p-type semiconductor by substituting Fe, resulting in increased electrical conductivity and improved thermoelectric performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Review
Biochemical Research Methods
Jorge M. Guerrero, Francisco S. Aguirre, Maria L. Mota, Amanda Carrillo
Summary: Research on disease diagnosis using immunosensors has shown significant progress in recent years, but further optimization is needed. Studies on immunosensors for nervous system diseases, such as multiple sclerosis, have potential for improving common in vitro diagnostic methods.
Article
Optics
Jessica Lillo-Ramiro, Jorge M. Guerrero-Villalba, Maria de L. Mota-Gonzalez, Francisco S. Aguirre-Tostado, Gerardo Gutierrez-Heredia, Israel Mejia-Silva, Amanda Carrillo-Castillo
Summary: This work focuses on the synthesis of copper oxide (CuO) thin films using a sol-gel process and spin coating technique, analyzing the chemical characteristics, thermal stability, optical properties, and thickness distribution. The influence of different parameters on the thin films was studied, revealing the interaction between CuO and glucose leading to glucose oxidation.
Article
Engineering, Electrical & Electronic
J. R. Castillo-Saenz, N. Nedev, B. Valdez-Salas, M. A. Martinez-Puente, F. S. Aguirre-Tostado, M. I. Mendivil-Palma, D. Mateos, M. A. Curiel-Alvarez, O. Perez-Landeros, E. Martinez-Guerra
Summary: Zinc oxide thin films were successfully grown at 70 degrees C using H2O and O-2 plasma processes, showing improved crystallinity and optical properties. The optimized deposition parameters and synthesis procedures led to high-quality films with promising characteristics for flexible electronics.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Physics, Applied
Ze Feng, Xiaoye Qin, Xiao Chen, Zhiyun Li, Rong Huang, Yang Shen, Ding Ding, Yitong Wang, Meiyi Jing, Yi Cui, An Dingsun, Hui Liu, Hong Dong, Robert M. Wallace
Summary: This study investigates the diffusion of interface oxygen and indium atoms in an InP/Al2O3 stack using O-18 isotope tracing, shedding light on the fundamental mechanism for III-V semiconductors' interface elemental diffusion and the interface passivation strategy.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
Si Joon Kim, Yong Chan Jung, Jaidah Mohan, Hyo Jeong Kim, Sung Min Rho, Min Seong Kim, Jeong Gyu Yoo, Hye Ryeon Park, Heber Hernandez-Arriaga, Jin-Hyun Kim, Hyung Tae Kim, Dong Hyun Choi, Joohye Jung, Su Min Hwang, Harrison Sejoon Kim, Hyun Jae Kim, Jiyoung Kim
Summary: This Letter proposes a high-pressure annealing (HPA) process as a way to reduce the thermal budget of Hf0.5Zr0.5O2 (HZO) thin films with ferroelectric behaviors. By applying pressure (15 atm) even at low temperatures of 300°C, the HZO films can be crystallized, obtaining ferroelectric properties for integration in the back-end-of-line.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Akshay Sahota, Harrison Sejoon Kim, Jaidah Mohan, Yong Chan Jung, Heber Hernandez-Arriaga, Dan N. Le, Si Joon Kim, Jang-Sik Lee, Jinho Ahn, Jiyoung Kim
Summary: In this study, a threshold switching (TS) selector with an Ag doping-based nano-polycrystalline ZnO switching layer was developed. The TS selector showed remarkable electroforming-free selection behavior, high device yield, and stable threshold voltage.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Arup Polley, Arul Vigneswar Ravichandran, Varun S. Kumar, Archana Venugopal, Lanxia Cheng, Antonio T. Lucero, Jiyoung Kim, Luigi Colombo, Robert R. Doering
Summary: A gate modulation scheme for graphene-based Hall sensors is proposed, utilizing dynamic ambipolar operation to up-convert input magnetic signals to higher frequencies while maintaining low offset and flicker noise, resulting in thermal noise limited performance.
IEEE SENSORS JOURNAL
(2021)
Article
Chemistry, Physical
R. Garza-Hernandez, H. J. Edwards, J. T. Gibbon, M. R. Alfaro-Cruz, V. R. Dhanak, F. S. Aguirre-Tostado
Summary: Cu2SnS3 thin films were synthesized using two different routes in an aprotic media. Controlling the sulfurization temperature allowed for the presence of diverse crystalline structures of Cu2SnS3. XPS measurements confirmed the presence of Sn4+ and Cu+ species, while bandgap values varied with different crystal phases. The films showed photoconductive properties, making them a potential option for solar applications.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Materials Science, Multidisciplinary
Jin-Hyun Kim, Hyung-Min Ji, Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Sang-Woo Kim, Jong-Yeon Baek, Jiyoung Kim, Rino Choi
Summary: Nanosecond ultra-violet (UV) laser annealing was introduced to address thermal degradation issues in device formation, and simulations and experiments were conducted to analyze the thermal effects, dopant distribution, and electrical characteristics after laser annealing. The formation of single crystal silicon phase after laser annealing resulted in improved electrical properties and structural features of the device.
Article
Chemistry, Physical
Victor Gomez Flores, Alejandro Martinez-Martinez, Jorge A. Roacho Perez, Jazzely Acosta Bezada, Francisco S. Aguirre-Tostado, Perla Elvia Garcia Casillas
Summary: Innovative and effective new technologies in the treatment of various diseases are increasingly being applied. Nanomedicine techniques involving the combination of nanoparticles with biological membranes aim to improve interactions and minimize side effects. By conjugating gold nanoparticles with fluorescein isothiocyanate and depositing them onto the surface of hemoglobin-free erythrocytes, the study demonstrates enhanced imaging sensitivity in the context of biological membranes.
Article
Nanoscience & Nanotechnology
Akshay Sahota, Harrison Sejoon Kim, Jaidah Mohan, Dan N. Le, Yong Chan Jung, Si Joon Kim, Jang-Sik Lee, Jinho Ahn, Heber Hernandez-Arriaga, Jiyoung Kim
Summary: This study investigates a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector using a co-sputtering technique without an Ag active metal layer. Results show that by regulating the Ag doping concentration, a high I-on/I-off ratio can be achieved with extremely low I-off value. The doping-based polycrystalline SL structure enhances device performance and cycling endurance.
Article
Materials Science, Multidisciplinary
Jesus U. Balderas-Aguilar, Ciro Falcony-Guajardo, Gonzalo A. Velazquez-Nevarez, Valeria Gonzalez-Perez, Eduardo Martinez-Guerra, Francisco S. Aguirre-Tostado
Summary: By controlling the ratio of methylammonium chloride and lead bromide in the multisource AACVD system, luminescent, morphological, and structural characteristics of hybrid and inorganic perovskite films deposited on hot glass substrates can be controlled. In situ crystallization modification during deposition and the simultaneous deposition of different precursor combinations can significantly impact the final properties of the films.
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Chemistry, Multidisciplinary
Xinglu Wang, Yaoqiao Hu, Seong Yeoul Kim, Rafik Addou, Kyeongjae Cho, Robert M. Wallace
Summary: This study investigates the origins of Fermi level (E-F) pinning for Ni and Ag contacts on W-TMDs by considering interface chemistry, band alignment, impurities, and imperfections of W-TMDs, contact metal adsorption mechanism, and the resultant electronic structure. The origins of E-F pinning at a covalent contact metal/W-TMD interface are defects, impurities, and interface reaction products, while for a van der Waals contact metal/TMD system, the primary factor responsible for E-F pinning is the electronic modification of the TMDs resulting from defects and impurities.
Article
Chemistry, Multidisciplinary
Sandeep Sugathan, Krishnamohan Thekkepat, Soumya Bandyopadhyay, Jiyoung Kim, Pil-Ryung Cha
Summary: This study develops a computational model to simulate the switching behavior of ferroelectric hafnium zirconium oxide (HZO) thin films and introduces a novel approach to optimize the coefficients describing the free energy. The model accurately captures experimental observations and provides insights for enhancing ferroelectric properties by controlling grain morphology and crystalline texture.
Article
Engineering, Electrical & Electronic
Jaidah Mohan, Yong Chan Jung, Heber Hernandez-Arriaga, Jin-Hyun Kim, Takashi Onaya, Akshay Sahota, Su Min Hwang, Dan N. Le, Jiyoung Kim, Si Joon Kim
Summary: This study investigates the correlation between imprint and polarization relaxation in ferroelectric HZO films, revealing the drastic relaxation effects due to imprint. Prepoled ferroelectric capacitors exhibit apparent imprint and strong polarization relaxation effects due to the development of built-in voltages.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
