Article
Materials Science, Coatings & Films
Takashi Tsukasaki, Hisashi Sumikura, Takuma Fujimoto, Miki Fujita, Toshiki Makimoto
Summary: The optical properties of heavily Be-doped p-type GaAsN were investigated, and it was found that the S-shape characteristic weakened with increasing hole concentration (p). A localized level was formed in Be-doped GaAsN despite high p, which was supported by the long radiative recombination lifetime.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2023)
Article
Chemistry, Multidisciplinary
Omer Erez-Cohen, Olga Brontvein, Israel Bar-Joseph
Summary: In this study, we investigate electrically driven plasmon (EDP) emission in metal-insulator-semiconductor tunnel junctions. We find that the amorphization of the silicon crystal near the junction due to applied voltage is critical in determining the nature of the emission. We also suggest that the properties of the insulating layer change above a certain voltage threshold, resulting in different spatial properties of EDP emission.
Article
Physics, Condensed Matter
Takashi Tsukasaki, Naoki Mochida, Miki Fujita, Toshiki Makimoto
Summary: In this study, deep electron traps in heavily Si-doped GaAsN were investigated, showing that the excitation of electrons to the conduction band depends on the annealing temperature. The results suggest that these deep electron traps are inherent in dilute GaAsN materials, affecting the electron transport properties.
PHYSICA B-CONDENSED MATTER
(2022)
Article
Physics, Multidisciplinary
Federico De Luca, Cristian Ciraci
Summary: This study proposes surface modulation of the equilibrium charge density as a technique to control and enhance the free electron nonlinear response in heavily doped semiconductors using an external static potential. Within a hydrodynamic perturbative approach, a two-order of magnitude boost in free electron third-harmonic generation is predicted.
PHYSICAL REVIEW LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Aiqin Hu, Wei Liu, Xiaofang Li, Shengnan Xu, Yaolong Li, Zhaohang Xue, Jinglin Tang, Lulu Ye, Hong Yang, Ming Li, Yu Ye, Quan Sun, Qihuang Gong, Guowei Lu
Summary: Theoretically, the kinetic energy of photoelectrons from n-type regions was found to be higher than that of p-type regions due to different work functions. Surprisingly, the outer n-type regions exhibited higher kinetic energy compared to inner n-type regions, caused by reverse bias induced by photoemission. Time-resolved PEEM results showed varying evolution rates of hot electrons in different doping regions.
Article
Chemistry, Multidisciplinary
Khondker Shihabul Hoque, Ahmed Zubair
Summary: This study investigates the possibility of inducing magnetization in tungsten selenide monolayer by alloying with vanadium selenide. The results show that as the proportion of vanadium atoms in the alloys increases, a phase transition from semiconducting to metallic to semiconducting is discovered, and all alloy compositions demonstrate induced magnetism with a long-range ferromagnetic order.
Article
Materials Science, Multidisciplinary
Defan Wu, Tong Zhao, Bin Ye, Xingbo Liang, Hao Chen, Qunlin Nie, Daxi Tian, Deren Yang, Xiangyang Ma
Summary: Heavily arsenic-doped Czochralski silicon is an important material for manufacturing power electronic devices. This study discovers that arsenic can precipitate in the silicon under prolonged anneals at specific temperatures, and the presence of vacancies/interstitial silicon atoms can influence the precipitation.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Bongkwon Son, Sang-Ho Shin, Yuhao Jin, Yikai Liao, Zhi-Jun Zhao, Jun-Ho Jeong, Qi Jie Wang, Xincai Wang, Chuan Seng Tan, Munho Kim
Summary: In this work, a heavily doped germanium inverted pyramid array is proposed as a candidate for tunable antireflection in the mid-infrared range. The structure consists of inverted pyramid structures formed by metal-assisted chemical etching, with a heavy doping layer obtained through laser annealing. The inverted pyramid acts as an antireflective surface, while the heavy doping layer functions as a high reflector. The reflectance of the inverted pyramid array is observed to be suppressed on undoped Ge and increased after doping, with a consistent reflectance in different wavelength ranges. Doping concentration and depth are identified as important factors for modulating the reflection spectra. The proposed heavily doped inverted Ge pyramid array opens up possibilities for a tunable and metal-oxide-semiconductor-compatible antireflection structure in the mid-infrared range.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Physics, Applied
Konstantin L. Kovalenko, Sergei Kozlovskiy, Nicolai N. Sharan, Eugeniy F. Venger
Summary: Analytical expressions for the low-field mobility in heavily doped 3D, 2D, and 1D semiconductor structures are obtained using the quantum-kinetic approach. The study takes into account the multi-ion scattering of charge carriers by ionized impurities and compares the calculated carrier mobility with experimental data in different materials. The results provide insights into the relationship between doping concentration and carrier mobility, as well as the impact of different scattering mechanisms on the electron mobility.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Physics, Applied
Yuwei Zhou, Minhan Mi, Mei Yang, Yutong Han, Pengfei Wang, Yilin Chen, Jielong Liu, Can Gong, Yiwei Lu, Meng Zhang, Qing Zhu, Xiaohua Ma, Yue Hao
Summary: By regrowing Ohmic contact with a contact ledge structure, high-performance millimeter-wave InAlN/GaN HEMT is fabricated for low voltage RF applications, showing improved output current density and power-added efficiency.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
X. Chen, M-L Lin, X. Cong, Y-C Leng, X. Zhang, P-H Tan
Summary: This study provides a deeper understanding of the intrinsic phonon anharmonicity of heavily-doped graphene through exploring the T-dependent Raman spectra based on FeCl3-based stage-1 graphite intercalation compound (GIC), revealing that the contribution of phonon anharmonicity to Γ(G) decreases as the Fermi level (E-F) approaches the Dirac point. The results also show that the T dependence of Delta omega(G) is almost independent on E-F and qualitatively agrees with the theoretical result of pristine graphene.
Article
Engineering, Electrical & Electronic
Andrey B. Pashkovskii, Sergey A. Bogdanov, Askhat K. Bakarov, Alexandr B. Grigorenko, K. S. Zhuravlev, Vladimir G. Lapin, Vladimir M. Lukashin, Ilya A. Rogachev, Evgeniy Tereshkin, Sergey Shcherbakov
Summary: In this article, a GaAs millimeter-wave pseudomorphic high-electron-mobility transistor (pHEMT) using sophisticated AlGaAs-InGaAs-GaAs heterostructure is presented, demonstrating high mobility and high density of two-dimensional electron gas. The transistor shows impressive RF characteristics with high specific output RF power.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Multidisciplinary
A. Solodovnyk, O. Laguta, A. Prokhorov, M. Segantini, B. Naydenov, P. Neugebauer, S. Greulich-Weber, E. Kalabukhova, D. Savchenko
Summary: This study investigates nitrogen-doped 15R silicon carbide monocrystals using multifrequency electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) spectroscopic methods. The results show the existence of an intensive S line related to nitrogen doping in 15R SiC. The analysis indicates different interaction processes occurring at different temperature ranges. The results from MW conductivity measurements agree with EPR and EDMR data, suggesting that the temperature variation is mainly controlled by electron hopping processes.
Article
Crystallography
Sebastian Gruner, Christian Kranert, Thomas Jauss, Tina Sorgenfrei, Christian Reimann, Jochen Friedrich
Summary: This study investigates the facets and related phenomena of silicon crystals grown in different directions using the Zone Melting and Floating Zone techniques. The presence of dislocations reduces the facet size and required supercooling, while atomically smooth interfaces stabilize the crystal morphology.
Article
Optics
P. A. Bokhan, N. V. Fateev, T. V. Malin, I. V. Osinnykh, D. E. Zakrevsky, K. S. Zhuravlev
Summary: Room temperature broad-band stimulated emission with transverse optically pumping was achieved in heavily doped Al0.68Ga0.32N:Si structures. The emission mechanism involves slow donor-acceptor pair and fast free electron-acceptor transitions.
JOURNAL OF LUMINESCENCE
(2022)
Article
Chemistry, Analytical
Fayong Liu, Zhongwang Wang, Soya Nakanao, Shinichi Ogawa, Yukinori Morita, Marek Schmidt, Mayeesha Haque, Manoharan Muruganathan, Hiroshi Mizuta
Article
Chemistry, Analytical
Haque Mayeesha Masrura, Afsal Kareekunnan, Fayong Liu, Sankar Ganesh Ramaraj, Gunter Ellrott, Ahmmed M. M. Hammam, Manoharan Muruganathan, Hiroshi Mizuta
Article
Chemistry, Multidisciplinary
Osazuwa G. Agbonlahor, Manoharan Muruganathan, Tomonori Imamura, Hiroshi Mizuta
Article
Physics, Applied
S. Hiraoka, K. Horibe, R. Ishihara, S. Oda, T. Kodera
APPLIED PHYSICS LETTERS
(2020)
Article
Physics, Applied
N. Shimatani, Y. Yamaoka, R. Ishihara, A. Andreev, D. A. Williams, S. Oda, T. Kodera
APPLIED PHYSICS LETTERS
(2020)
Article
Chemistry, Physical
Chunmeng Liu, Jiaqi Zhang, Manoharan Muruganathan, Hiroshi Mizuta, Yoshifumi Oshima, Xiaobin Zhang
Article
Nanoscience & Nanotechnology
Chunmeng Liu, Jiaqi Zhang, Xiaobin Zhang, Manoharan Muruganathan, Hiroshi Mizuta, Yoshifumi Oshima
Summary: The study found that the current-voltage characteristics of graphene nanoribbons with zigzag and armchair edges differ, with the zigzag edge having a larger energy gap. Additionally, the in-situ transmission electron microscopy method allows for effective observation and modification of the structure, advancing research on the structural dependence of electrical conduction in two-dimensional materials.
Article
Physics, Applied
Zhongwang Wang, Yahua Yuan, Xiaochi Liu, Manoharan Muruganathan, Hiroshi Mizuta, Jian Sun
Summary: In this study, coupled double-quantum dot-like transport was demonstrated in a controllably doped graphene nanoribbon. By utilizing controlled doping and electrically tunable inter-dot coupling, the transition from strongly to weakly coupled double quantum dots was observed.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Takuya Iwasaki, Shu Nakamura, Osazuwa G. Agbonlahor, Manoharan Muruganathan, Masashi Akabori, Yoshifumi Morita, Satoshi Moriyama, Shinichi Ogawa, Yutaka Wakayama, Hiroshi Mizuta, Shu Nakaharai
Summary: The study focuses on Anderson localization in Dirac materials and the strong and weak localization phenomena in specific graphene. Negative magnetoresistance was achieved through helium ion irradiation, and for the first time, negative magnetoresistance in graphene devices was observed at room temperature.
Article
Materials Science, Multidisciplinary
Manoharan Muruganathan, Hiroshi Mizuta
Summary: The study found that the negatively charged boron-vacancy center in diamond has well-isolated gap states and enables spin-conserved triplet excitation. In addition, formation energies of different charge states and defect wavefunctions were calculated, revealing the potential of BV-1 center as a promising color center for diamonds.
DIAMOND AND RELATED MATERIALS
(2021)
Article
Physics, Condensed Matter
Anita Yadav, Shailesh Kumar, Manoharan Muruganathan, Rakesh Kumar
Summary: The theoretical investigations of non-centrosymmetric half Heusler compounds XPtS revealed that they are topological insulators (TIs) and their properties are affected by static strain, with BaPtS having the highest ZT value at 1% strain. These findings provide a theoretical foundation for experiments and potential applications in spintronics and thermoelectricity.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2021)
Editorial Material
Chemistry, Multidisciplinary
Kunji Chen, Shunri Oda, Linwei Yu
Proceedings Paper
Engineering, Electrical & Electronic
Fayong Liu, Manoharan Muruganathan, Shinichi Ogawa, Yukinori Morita, Zhongwang Wang, Marek Schmidt, Hiroshi Mizuta
Summary: The successful observation of a single electron phenomenon on a large area suspended graphene nanomesh device patterned by the helium ion beam milling technique provides a more practical way to use graphene for quantum technology.
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)
(2021)
Article
Physics, Multidisciplinary
Anita Yadav, Shailesh Kumar, Manoharan Muruganathan, Rakesh Kumar
Article
Materials Science, Multidisciplinary
Afsal Kareekunnan, Manoharan Muruganathan, Hiroshi Mizuta