Current-voltage characteristics and transport mechanism of solar cells based on ZnO nanorods/In2S3/CuSCN

Temperature dependent current-voltage characteristics in the dark and under illumination have been analyzed on up to 3.2% efficient solar cells with extremely thin absorber based on ZnO nanorods/In2S3/CuSCN structures. The diode ideality factor and the open circuit voltage are strongly influenced on a thermal activation process. Significant enhancement of the devices efficiency by annealing at moderate temperatures has been demonstrated. After this annealing, the activation energy of the saturation current increased from 1.00 to 1.46 eV (in the dark). Transport mechanisms at the In2S3/CuSCN interface region are discussed.