Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy

标题
Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 92, Issue 26, Pages 263107
出版商
AIP Publishing
发表日期
2008-07-11
DOI
10.1063/1.2953702

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