Current-driven magnetization reversal at extremely low threshold current density in (Ga,Mn)As-based double-barrier magnetic tunnel junctions

出版年份 2008 全文链接

标题

Current-driven magnetization reversal at extremely low threshold current density in (Ga,Mn)As-based double-barrier magnetic tunnel junctions

作者

关键词

-

出版物

APPLIED PHYSICS LETTERS

Volume 92, Issue 8, Pages 082506

出版商

AIP Publishing

发表日期

2008-02-29

DOI

10.1063/1.2841703

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