Article
Chemistry, Inorganic & Nuclear
Joschua Helmer, Alexander Hepp, Felicitas Lips
Summary: The reductive debromination of {N(SiMe3)Ph}SiBr3 yields a zwitterionic six-vertex amido-substituted silicon cluster, which forms adducts with NHCMe4 and DMAP. The NHC adduct further coordinates to BH3. Additionally, the silicon cluster can undergo addition with MeI and iodine to form halogenated silicon clusters.
DALTON TRANSACTIONS
(2022)
Article
Materials Science, Coatings & Films
Clarence Y. Chan, Shunya Namiki, Jennifer K. Hite, Michael A. Mastro, Syed B. Qadri, Xiuling Li
Summary: Metal-assisted chemical etching is a plasma-free method that can produce high aspect ratio structures, with potential applications in electronic and optoelectronic devices. The method was successfully demonstrated with ordered micropillar arrays of homoepitaxial GaN, showing promising results in spatially resolved photoluminescence. This approach may also be extended to InGaN and AlGaN, offering a facile and scalable processing route for III-nitride based devices.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Chemistry, Physical
Yingjian Yu, Shaoshuai Gao, Sujuan Hu
Summary: This study aims to improve the performance of Si-air batteries by doping Zn and Fe atoms into Si electrode models and conducting DFT calculations. Various models of Si-Zn/SiO2 and Si-Fe/SiO2 interfaces were constructed to calculate the adsorption energies of SiO2 units on Zn or Fe-doped Si electrodes, as well as to analyze the EDP and electron density changes across the interfaces.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Materials Science, Multidisciplinary
Teng Jiao, Zeming Li, Wei Chen, Xin Dong, Zhengda Li, Zhaoti Diao, Yuantao Zhang, Baolin Zhang
Summary: The use of silane as an n-type dopant for Si-doped beta-Ga2O3 films grown on (100) beta-Ga2O3 substrates via MOCVD allows for stable control of electron concentrations, with higher quality and lower defect density observed in homoepitaxial compared to heteroepitaxial films. Increasing doping concentration may adversely affect defect density and surface morphology of the films.
Article
Materials Science, Multidisciplinary
Armando Hernandez, Md Minhazul Islam, Pooneh Saddatkia, Charles Codding, Prabin Dulal, Sahil Agarwal, Adam Janover, Steven Novak, Mengbing Huang, Tuoc Dang, Mike Snure, F. A. Selim
Summary: Epitaxial Ga2O3 films were grown through MOCVD with optimized growth and doping parameters, showing that electron density and conductivity are influenced by the interplay between dopant concentration, C concentration, and trapping defects in the films. Conductive films with desirable resistivity and mobility for FET and transparent FET applications in DUV technology were successfully obtained.
RESULTS IN PHYSICS
(2021)
Article
Physics, Applied
S. Bin Anooz, R. Grueneberg, T-S Chou, A. Fiedler, K. Irmscher, C. Wouters, R. Schewski, M. Albrecht, Z. Galazka, W. Miller, J. Schwarzkopf, A. Popp
Summary: The study investigated the impact of chamber pressure and Si-doping on the growth of beta-Ga2O3 thin films, resulting in changes in growth modes and electron mobility. High-quality homoepitaxial thin films of beta-Ga2O3 were obtained under optimal conditions.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Chemistry, Multidisciplinary
Jinshuai Zhang, Chun Li, Yin Liang, Jiepeng Song, Qiuyu Shang, Liyun Zhao, Huifeng Tian, Lei Liu, Qing Zhang
Summary: The researchers have successfully fabricated suspended microstructure arrays with single crystalline structures using a novel method, and the photoluminescence has been enhanced by 11.2 times. This method utilizes perovskite supersaturated halide aqueous solutions to repair surface defects induced by lithography and satisfy homoepitaxial growth kinetics. This study provides a new pathway for the cost-effective fabrication of efficiency-enhanced and on-chip optoelectronic devices.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Xueqiang Ji, Jianying Yue, Xiaohui Qi, Zuyong Yan, Shan Li, Chao Lu, Zhitong Li, Zeng Liu, Song Qi, Xu Yan, Jinjin Wang, Shuang Wang, Peigang Li, Weihua Tang
Summary: In this study, stable and tunable electron concentration in fl-Ga2O3 homoepitaxial epitaxial films was achieved by using metal-organic chemical vapor deposition (MOCVD) on Fe-doped (010)-oriented fl-Ga2O3 substrates. The electrical properties of the films were found to vary depending on the concentration of Si ions incorporated during the growth process. The results suggest that stable and tunable electron concentration is crucial for optimizing high-power electronic devices based on fl-Ga2O3.
Article
Materials Science, Multidisciplinary
Tae Sang Park, Eui Sun Hwang, Min Jin Kang, Gi Hyeon Baek, Byoung-Ho Cheong
Summary: The ordering of Si nanoparticles formed on an amorphous-Si thin film was investigated under laser irradiations. The nanoparticle arrangement was found to vary depending on the laser fluences, incident angles, and polarizations. The results can be used to control the device performance in electronic or photovoltaic substrates.
Article
Nanoscience & Nanotechnology
Sadman Sakib, Amin Hosseini, Igor Zhitomirsky, Leyla Soleymani
Summary: The study presents a photoelectrochemical immunosensor for detecting IL-6 by utilizing catecholate-modified TiO2 photoelectrodes, achieving high sensitivity and signal-to-noise ratio enhancement.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Review
Chemistry, Multidisciplinary
Ravi P. Srivastava, Dahl-Young Khang
Summary: Metal-assisted chemical etching (MaCE) is a simple, low-cost, and scalable method for producing silicon structures of various dimensions. Careful optimization of parameters is crucial for successful fabrication of silicon structures. MaCE enables bulk-scale structuring of silicon with significant opportunities for applications in various fields.
ADVANCED MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
M. Sunkur, O. Gullu
Summary: This study investigates the impact of a Carmoisine azo dye layer on electronic transport at the p-silicon/Al interface. Various spectroscopic measurements are employed to analyze the Carmoisine dye molecule. The study finds that the Carmoisine dye enhances the performance of the Al/p-Si structures and reduces the ideality factor, while also decreasing the leakage current and defect-trapped charge density.
MATERIALS CHEMISTRY AND PHYSICS
(2023)
Article
Materials Science, Coatings & Films
Petr Novotny, H. Henry Lamb
Summary: MoO3 films were grown on stepped c-plane sapphire substrates by molecular beam epitaxy, resulting in multilayer growth on surfaces with wide atomically smooth terraces. The morphology of the monocrystalline films strongly suggests multilayer growth.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Chemistry, Multidisciplinary
Huajie Zhang, Jinfu Li
Summary: Alloying Si with Ge enhances its electrochemical performance, leading to higher efficiency Li-ion batteries. In this study, Sr was added to the Al-Si-Ge eutectic ribbons as a modifier, resulting in porous coral-like SiGe particles with numerous fibrous branches. The Sr-modified SiGe anode exhibited excellent capacity of 1166.6 mA h g(-1) at 0.1 A g(-1) after 100 cycles, along with a fantastic initial coulombic efficiency of 83.62%. Additionally, it showed superior rate performance with a reversible capacity of 675.3 mA h g(-1) at a current density of 8 A g(-1). This research demonstrates that modification treatments commonly used in metallurgy hold promise for synthesizing high-performance battery electrodes and other energy storage materials.
Article
Nanoscience & Nanotechnology
Xianwu Xiu, Liping Hou, Jing Yu, Shouzhen Jiang, Chonghui Li, Xiaofei Zhao, Qianqian Peng, Si Qiu, Chao Zhang, Baoyuan Man, Zhen Li
Summary: The research presents a multi-layered Ag nanoparticle/graphene coupled to an underlying Cu film system for ultra-sensitive detection of toxic molecules and in situ monitoring of plasmon-driven reactions. The study found that the intensity and density of hot spots can be effectively manipulated by the number of plasmonic layers, while the bottom Cu film enhances Raman signals. The MAgNP-CuF exhibits excellent stability and reproducibility, showing promise for wider applications in photocatalysis.
Article
Chemistry, Physical
Anthony De Luca, Alain Portavoce, Michael Texier, Nelly Burle, Dominique Mangelinck, Giovanni Isella
JOURNAL OF ALLOYS AND COMPOUNDS
(2017)
Article
Chemistry, Physical
Konstanze R. Hahn, Elie Assaf, Alain Portavoce, Sylvain Bertaina, Ahmed Charai
JOURNAL OF PHYSICAL CHEMISTRY C
(2017)
Article
Chemistry, Physical
A. Portavoce, E. Assaf, C. Alvarez, M. Bertoglio, R. Clerac, K. Hoummada, C. Alfonso, A. Charai, O. Pilone, K. Hahn, V. Dolocan, S. Bertaina
APPLIED SURFACE SCIENCE
(2018)
Article
Nanoscience & Nanotechnology
T. Luo, J. Perrin Toinin, M. Descoins, K. Hoummada, M. Bertoglio, L. Chow, D. Narducci, A. Portavoce
SCRIPTA MATERIALIA
(2018)
Article
Materials Science, Multidisciplinary
Alain Portavoce, Khalid Hoummada, Lee Chow
MICROSCOPY AND MICROANALYSIS
(2019)
Article
Chemistry, Physical
E. Assaf, A. Portavoce, L. Patout, M. Bertoglio, R. Clerac, K. Hoummada, A. Charai, S. Bertaina
APPLIED SURFACE SCIENCE
(2019)
Article
Materials Science, Multidisciplinary
G. Da Rosa, P. Maugis, A. Portavoce, J. Drillet, N. Valle, E. Lentzen, K. Hoummada
Article
Materials Science, Multidisciplinary
I Medouni, A. Portavoce, P. Maugis, M. Yescas, F. Roch, P. Joly, A. Compos, C. Dominici, K. Hoummada
JOURNAL OF MATERIALS SCIENCE
(2020)
Article
Materials Science, Multidisciplinary
Nouredine Oueldna, Alain Portavoce, Maxime Bertoglio, Marion Descoins, Abdelkhalek Kammouni, Khalid Hoummada
Article
Nanoscience & Nanotechnology
A. Portavoce, G. Roland, J. Remondina, M. Descoins, M. Bertoglio, M. Amalraj, P. Eymeoud, D. Dutartre, F. Lorut, M. Putero
Summary: The study investigates atomic redistribution in Ge-Sb-Te (GST)-based memory cells during SET/RESET cycling, proposing the use of a simplified GST system for atomic scale simulations, and discussing the influence of Ge excess on atomic redistribution in GrGST films and GST ternary phase stoichiometry. It suggests that using amorphous layers to control microstructure evolution of films during cycling is an effective approach.
Article
Nanoscience & Nanotechnology
J. Remondina, A. Portavoce, M. Bertoglio, G. Roland, E. Petroni, D. Benoit, Y. Le Friec, F. Lorut, M. Putero
Summary: GGST memory cells are embedded with Si or Ti nitride layers to prevent oxidation and doped with elements such as N, C, O, or Bi to delay crystallization. Results show that the main desorption peak occurs after GGST full crystallization, indicating a change in the chemical composition of N-doped GGST during thermal annealing and crystallization.
Article
Materials Science, Multidisciplinary
E. Assaf, A. Portavoce, M. Descoins, M. Bertoglio, S. Bertaina
Article
Nanoscience & Nanotechnology
A. Portavoce, J. Perrin-Toinin, K. Hoummada
REVIEWS ON ADVANCED MATERIALS SCIENCE
(2017)
Article
Physics, Applied
R. Milazzo, G. Impellizzeri, D. Piccinotti, D. De Salvador, A. Portavoce, A. La Magna, G. Fortunato, D. Mangelinck, V. Privitera, A. Carnera, E. Napolitani
APPLIED PHYSICS LETTERS
(2017)
Article
Physics, Applied
E. Assaf, A. Portavoce, K. Hoummada, M. Bertoglio, S. Bertaina
APPLIED PHYSICS LETTERS
(2017)
