期刊
APPLIED PHYSICS LETTERS
卷 93, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3039061
关键词
avalanche photodiodes; gallium compounds; wide band gap semiconductors
Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n-layer. Dependency of gain and leakage current on mesa area for these heterojunction APDs were studied. Back-illumination via different wavelength sources was used to demonstrate the advantages of hole-initiated multiplication in GaN APDs.
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