期刊
APPLIED PHYSICS LETTERS
卷 93, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3000614
关键词
aluminium compounds; band structure; cobalt; electron spin polarisation; ferromagnetic materials; gold; magnetic thin films; magnetisation; nickel; tunnelling magnetoresistance
资金
- Halmstad University
- Faculty of Natural Sciences at Kalmar University
- Swedish Research Council [621-2004-4439]
- Swedish National Board for Industrial and Technological Development
- Office of Naval Research
- Knut and Alice Wallenberg Foundation
- Swedish Foundation for Strategic Research
We report on magnetoresistance (MR) studies on Co/AlO(X)/Au and Co/AlO(X)/Ni/Au magnetic tunnel junctions. In spite of the fact that the difference between the two samples is merely a 3 nm thick Ni layer, there is a sharp contrast in MR behavior indicating that the electronic structure at the interface between the ferromagnetic electrodes and the insulating barrier dominates the MR signal. The former sample exhibits a clear tunneling anisotropic MR (TAMR), with the characteristic correlation between resistance and current direction, in contrast to the latter sample which displays a conventional tunneling MR (TMR) dominated by the relative orientation between the magnetization directions of the two electrodes. In addition, the TAMR has a much stronger temperature dependence than the TMR, indicating a much faster drop-off of the tunneling density of states anisotropy than the tunneling electron spin polarization with increasing temperature. Finally, we propose a possible simple way to distinguish TAMR from normal TMR by measuring the resistance of the device at different angles of the external magnetic field.
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