Article
Nanoscience & Nanotechnology
Bo Meng, Borislav Hinkov, Nolwenn Marie L. Biavan, Hanh T. Hoang, Denis Lefebvre, Maxime Hugues, David Stark, Martin Franckie, Almudena Torres-Pardo, Julen Tamayo-Arriola, Miguel M. Bajo, Adrian Hierro, Gottfried Strasser, Jerome Faist, Jean M. Chauveau
Summary: ZnO-based heterostructures are considered promising candidates for optoelectronic devices in the infrared and terahertz spectral domains due to their unique material properties. Experimental observation has shown that ZnO/MgxZn1-xO quantum cascade structures can exhibit terahertz intersubband electroluminescence, which is significant for the realization of ZnO-based terahertz quantum cascade lasers.
Article
Optics
M. Stachowicz, J. M. Sajkowski, A. Wierzbicka, E. Przezdziecka, M. A. Pietrzyk, E. Dynowska, S. Magalhaes, E. Alves, A. Kozanecki
Summary: The study described the optical properties of homoepitaxially grown ZnO/MgO superlattices on a-oriented ZnO substrates and found that the wurtzite coordination collapses in the SLs with 3 nm MgO thick barriers. The high energy barrier of MgO in such structures allows treating the ZnO layers as separate quantum wells.
JOURNAL OF LUMINESCENCE
(2021)
Article
Engineering, Electrical & Electronic
A. Adhikari, A. Lysak, A. Wierzbicka, P. Sybilski, A. Reszka, B. S. Witkowski, E. Przezdziecka
Summary: In this study, the growth of CdO alloy using plasma-assisted molecular beam epitaxy method was investigated. The CdO alloy showed great potential for optoelectronic device fabrication. Structural and morphological analysis were conducted using X-ray diffraction and Atomic Force Microscopy techniques, while composition analysis was done by Energy-dispersive X-ray spectroscopy. The optical properties of thin films were studied using UV-Vis spectroscopy, and it was found that the bandgap of the films is affected by the incorporation of Mg2+ ions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Physical
Peijiao Fang, Baiwei Wang, C. P. Mulligan, T. M. Murray, S. Khare, Daniel Gall
Summary: In this study, tungsten carbide films were sputter-deposited onto Mg0(001) substrates at 400 degrees C in Ar - CH4 gas mixtures. The films were found to contain amorphous carbon and carbon vacancies. The epitaxial relationship between the cubic WCy phase layers and the substrate was demonstrated through X-ray diffraction and transmission electron microscopy analyses.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Materials Science, Multidisciplinary
Hardeep Kumar, Sergio L. Morelhao, Gerson Pessotto, Hardepinder Singh, Anil K. Sinha, Daniel R. Cornejo
Summary: The effect of substrate orientation on the structural and magnetic properties of FeRh thin films is studied. FeRh films with different orientations are obtained on MgO substrates. It is found that lattice strain can tune the temperature of the antiferromagnetic-ferromagnetic phase transition, and a larger thermal hysteresis is observed.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
(2022)
Article
Physics, Applied
I. Ahmed, S. De Gendt, C. Merckling
Summary: The BaBiO3 perovskite oxide is an interesting material system that exhibits superconductivity when p-doped and predicted topological insulation when n-doped. High-quality single crystalline BaBiO3 films are grown on Si(001) substrates using molecular beam epitaxy, with the growth window established by systematically varying growth parameters.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
Babak Nikoobakht, Aaron C. Johnston-Peck, David Laleyan, Ping Wang, Zetian Mi
Summary: A novel approach was presented for growth of surface-directed spinel ZnGa2O4 and beta-Ga2O3 nanofins coated with a non-polar GaN shell, utilizing a vacancy-assisted mechanism for exchange between Zn and Ga. The predictability over surface registries and tunable porosity of the core/shell fins is anticipated to be significant for various applications.
Article
Chemistry, Physical
Shigeru Kaku, Kota L. Hiwatari, Junji Yoshino
Summary: By optimizing the surface cleaning procedures and growth conditions, we investigated the surface structure of strained-alpha-Sn layers grown on InSb(001) surfaces, revealing that the (2 x 2) diffraction patterns are attributed to double domain (2 x 1) reconstructed surfaces rotated 90 degrees with respect to each other.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Physical
Ning Wang, Peng Wang, Fengzhi Wang, Haiping He, Jinyun Huang, Xinhua Pan, Guangming Zhu, Jiangbo Wang, Zhizhen Ye
Summary: This study investigates the growth of ZnO film on a graphene-buffered sapphire substrate using plasma-assisted molecular beam epitaxy (PAMBE). The results show that the crystal quality of ZnO film can be improved by buffering it with double-layer graphene (DLG), leading to the formation of symmetric pits on the film surface. The findings have implications for the development of simplified growth technology for ZnO-based films and devices.
APPLIED SURFACE SCIENCE
(2022)
Article
Nanoscience & Nanotechnology
Eungbeom Yeon, Seungwan Woo, Rafael Jumar Chu, In-Hwan Lee, Ho Won Jang, Daehwan Jung, Won Jun Choi
Summary: Monolithic integration of GaSb-based optoelectronic devices on Si is a promising approach for achieving a low-cost, compact, and scalable infrared photonics platform. Using appropriate defect filter layers can reduce dislocation densities and improve performance.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Crystallography
Anthony Rice, Kirstin Alberi
Summary: Topological semimetals, with their unique combination of properties, have various applications in optoelectronics, spintronics, low energy computing, and catalysis. While they have been grown as high-quality bulk single crystals, their integration with semiconductor substrates is necessary for maximizing their technological potential. This study demonstrates the epitaxial growth of the Dirac semimetal Cd3As2 on Si(001) through two different routes. This work lays the foundation for integrating novel semimetal materials with existing CMOS technology.
Article
Crystallography
Amalia Fernando-Saavedra, Steven Albert, Ana Bengoechea-Encabo, Achim Trampert, Mengyao Xie, Miguel A. Sanchez-Garcia, Enrique Calleja
Summary: Non-polar m-plane GaN films were grown on & gamma;-LiAlO2 (100) substrates using a two-step process that involved coalescence of GaN nanocolumns obtained from a GaN buffer. Transmission electron microscopy data showed a significant reduction in extended defects density in the coalesced film compared to the initial GaN buffer, likely due to a filter effect during the regrowth process. Low temperature photoluminescence spectra confirmed this reduction in defects, with a decrease in stacking faults emission peaks and a dominant donor-bound excitonic emission at 3.472 eV.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Physics, Applied
Minh Anh Phan Nguyen, Jennifer Hite, Michael A. Mastro, Mehran Kianinia, Milos Toth, Igor Aharonovich
Summary: This study investigates the nature of quantum emitters in GaN grown on samples with different growth orientations, revealing consistent formation of quantum emitters in Ga-polar regions. Findings shed light on the origins of these quantum emitters and demonstrate site-selective formation in GaN. Through various tests, the overall defectivity of Ga-polar GaN synthesized using a specific growth procedure is attributed to the formation of quantum emitters.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Kingsley Egbo, Jonas Laehnemann, Andreas Falkenstein, Joel Varley, Oliver Bierwagen
Summary: (La and Ga)-doped tin monoxide thin films were grown with dopant concentrations ranging from approximate to 5 x 10(18) to 2 x 10(21) cm(-3). Ga acted as an acceptor and La as a compensating donor in the doped samples. The results show the possibilities of controlling the hole concentration in p-type SnO, which can be useful for a range of optoelectronic and gas-sensing applications.
APPLIED PHYSICS LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Joseph Roth, Tatiana Kuznetsova, Leixin Miao, Alexej Pogrebnyakov, Nasim Alem, Roman Engel-Herbert
Summary: Exotic material properties and topological nontrivial surface states are theoretically predicted to emerge in [111]-oriented perovskite layers. However, the growth of perovskite oxide films along this crystallographic direction has been proven to be difficult due to the highly polar character of the perovskite (111) surface. Successful epitaxial growth of high-quality SrVO3(111) thin films was achieved by hybrid molecular beam epitaxy, opening up opportunities for studying transport properties of topological nontrivial and correlated electron systems.
Article
Chemistry, Multidisciplinary
Duc Duy Le, Trong Si Ngo, Jung-Hoon Song, Soon-Ku Hong
CRYSTAL GROWTH & DESIGN
(2018)
Article
Materials Science, Multidisciplinary
Duc Duy Le, Soon-Ku Hong, Trong Si Ngo, Jeongkuk Lee, Yun Chang Park, Sun Ig Hong, Young-Sang Na
METALS AND MATERIALS INTERNATIONAL
(2018)
Article
Energy & Fuels
Eunseong Moon, Inhee Lee, David Blaauw, Jamie D. Phillips
PROGRESS IN PHOTOVOLTAICS
(2019)
Article
Engineering, Electrical & Electronic
Hannah N. Masten, Jamie D. Phillips, Rebecca L. Peterson
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2019)
Article
Physics, Applied
Minhyung Ahn, Alex Sarracino, Abdul Ansari, Ben Torralva, Steven Yalisove, Jamie Phillips
JOURNAL OF APPLIED PHYSICS
(2019)
Article
Physics, Applied
Chihyu Chen, Vladimir A. Stoica, Richard D. Schaller, Roy Clarke, Jamie D. Phillips
JOURNAL OF APPLIED PHYSICS
(2019)
Article
Physics, Multidisciplinary
I Ramiro, J. Villa, J. Hwang, A. J. Martin, J. Millunchick, J. Phillips, A. Marti
PHYSICAL REVIEW LETTERS
(2020)
Article
Engineering, Electrical & Electronic
Jamie D. Phillips
Summary: This work presents an equivalent circuit model for thermoradiative cells based on the underlying thermodynamic device description and incorporation of parasitic nonradiative processes. The compact model combines common circuit elements and defines the specific quantitative parameters needed to describe the behavior of these devices, serving as an important tool for the development of thermoradiative energy devices and circuits.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Hannah N. Masten, Jamie D. Phillips, Rebecca L. Peterson
Summary: The study found that HfO2/beta-Ga2O3 MOSCAPs exhibited significant positive flatband voltage shifts after stress testing, which could be fully recovered under deep ultraviolet illumination, while HfO2/Si MOSCAPs could not recover and showed smaller voltage shifts. It was also observed that the type-II band alignment between HfO2 and beta-Ga2O3 allowed for full recovery via photogeneration of electron-hole pairs.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Nanoscience & Nanotechnology
Eunseong Moon, Michael Barrow, Jongyup Lim, Jungho Lee, Samuel R. Nason, Joseph Costello, Hun Seok Kim, Cynthia Chestek, Taekwang Jang, David Blaauw, Jamie D. Phillips
Summary: This work demonstrates a near-infrared optical power and data communication link for a neural recording system that meets the size and power requirements to achieve dense arrays and prevent tissue heating. The optical link is realized using an integrated optoelectronic device consisting of a tandem photovoltaic cell and microscale light-emitting diode, showcasing end-to-end functionality of a wireless neural link within system constraints.
Article
Nanoscience & Nanotechnology
Minhyung Ahn, Yongmo Park, Seung Hwan Lee, Sieun Chae, Jihang Lee, John T. Heron, Emmanouil Kioupakis, Wei D. Lu, Jamie D. Phillips
Summary: High-entropy-oxide-based memristors composed of Zr, Hf, Nb, Ta, Mo, and W oxides demonstrate uniform distribution of vacancies and low stochastic behavior in resistive switching, showing promise for neuromorphic applications. These memristors exhibit forming-free operation, low device and cycle variability, gradual conductance modulation, 6-bit operation, and long retention.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Physics, Applied
Michael Barrow, Jamie Phillips
Summary: The high-Q resonances observed in subwavelength gratings have various applications and can be integrated with active devices, opening new possibilities for microscale optical systems.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Michael Barrow, Shawn Wright, Sarah Puzycki, Piyush Shah, Robert Bedford, Yuanchang Zhang, Jamie Phillips
Summary: This study presents a selective GaAs etch using an inductively coupled plasma with an HBr/SF6/He etch chemistry, demonstrating high etch rates, selectivity, and minimal surface roughness and undercut. Additionally, the use of an AlGaAs etch stop with high Al content significantly increases selectivity. By characterizing the HBr-based selective GaAs etch, this work offers a possible alternative to chlorine-based selective processes.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
(2021)
Article
Materials Science, Multidisciplinary
Vincenzo Pecunia, S. Ravi P. Silva, Jamie D. Phillips, Elisa Artegiani, Alessandro Romeo, Hongjae Shim, Jongsung Park, Jin Hyeok Kim, Jae Sung Yun, Gregory C. Welch, Bryon W. Larson, Myles Creran, Audrey Laventure, Kezia Sasitharan, Natalie Flores-Diaz, Marina Freitag, Jie Xu, Thomas M. Brown, Benxuan Li, Yiwen Wang, Zhe Li, Bo Hou, Behrang H. Hamadani, Emmanuel Defay, Veronika Kovacova, Sebastjan Glinsek, Sohini Kar-Narayan, Yang Bai, Da Bin Kim, Yong Soo Cho, Agne Zukauskaite, Stephan Barth, Feng Ru Fan, Wenzhuo Wu, Pedro Costa, Javier del Campo, Senentxu Lanceros-Mendez, Hamideh Khanbareh, Zhong Lin Wang, Xiong Pu, Caofeng Pan, Renyun Zhang, Jing Xu, Xun Zhao, Yihao Zhou, Guorui Chen, Trinny Tat, Il Woo Ock, Jun Chen, Sontyana Adonijah Graham, Jae Su Yu, Ling-Zhi Huang, Dan-Dan Li, Ming-Guo Ma, Jikui Luo, Feng Jiang, Pooi See Lee, Bhaskar Dudem, Venkateswaran Vivekananthan, Mercouri G. Kanatzidis, Hongyao Xie, Xiao-Lei Shi, Zhi-Gang Chen, Alexander Riss, Michael Parzer, Fabian Garmroudi, Ernst Bauer, Duncan Zavanelli, Madison K. Brod, Muath Al Malki, G. Jeffrey Snyder, Kirill Kovnir, Susan M. Kauzlarich, Ctirad Uher, Jinle Lan, Yuan-Hua Lin, Luis Fonseca, Alex Morata, Marisol Martin-Gonzalez, Giovanni Pennelli, David Berthebaud, Takao Mori, Robert J. Quinn, Jan-Willem G. Bos, Christophe Candolfi, Patrick Gougeon, Philippe Gall, Bertrand Lenoir, Deepak Venkateshvaran, Bernd Kaestner, Yunshan Zhao, Gang Zhang, Yoshiyuki Nonoguchi, Bob C. Schroeder, Emiliano Bilotti, Akanksha K. Menon, Jeffrey J. Urban, Oliver Fenwick, Ceyla Asker, A. Alec Talin, Thomas D. Anthopoulos, Tommaso Losi, Fabrizio Viola, Mario Caironi, Dimitra G. Georgiadou, Li Ding, Lian-Mao Peng, Zhenxing Wang, Muh-Dey Wei, Renato Negra, Max C. Lemme, Mahmoud Wagih, Steve Beeby, Taofeeq Ibn-Mohammed, K. B. Mustapha, A. P. Joshi
Summary: Ambient energy harvesting has the potential to contribute to sustainable development and power the growth of smart devices in the Internet of Things. Innovative materials are crucial for efficient energy conversion, and this Roadmap provides insights into recent advances and challenges in the field. Promising directions for future research are outlined to fully harness the potential of energy harvesting materials.
JOURNAL OF PHYSICS-MATERIALS
(2023)
Article
Energy & Fuels
Eunseong Moon, Michael Barrow, Jongyup Lim, David Blaauw, Jamie D. Phillips
IEEE JOURNAL OF PHOTOVOLTAICS
(2020)
