期刊
APPLIED PHYSICS LETTERS
卷 93, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3033224
关键词
II-VI semiconductors; phonon-exciton interactions; photoluminescence; wide band gap semiconductors; zinc; zinc compounds
资金
- Korean Government (MOEHRD, Basic Research Promotion Fund) [KRF-2006-003D00318]
The authors have an extensive study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks. In the photoluminescence (PL) spectra at 10 K, Zn-polar and O-polar faces show a common emission feature: neutral donor-bound excitons and their longitudinal-optical (LO) phonon replicas are strong and free excitons are very weak. However, in the PL spectra at room temperature (RT), Zn-polar and O-polar faces show extremely different emission characteristics: the emission intensity of Zn-polar face is 30 times larger than that of O-polar face and the band edge of Zn-polar face is 33 meV redshifted from that of O-polar face. The temperature dependence of photoluminescence indicates that the PL spectra at RT are closely associated with free excitons and their phonon-assisted annihilation processes. As a result, it is found that the RT PL spectra of Zn-polar face are dominated by the first-order LO phonon replica of A free excitons, while that of O-polar face is determined by A free excitons. This is ascribed to the difference in exciton-phonon coupling strengths that Zn-polar phase has larger coupling strength than O-polar face.
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