In-plane c-axis oriented barium ferrite films with self-bias and low microwave loss

Hybrid pulse laser deposition and liquid phase epitaxy methods have been used to produce in-plane c-axis (IPCA) oriented barium ferrite (BaM) films on a-plane (11 (2) over bar0) sapphire substrates with low microwave loss and a high remanence. Total thicknesses were from 5 to 20 mu m. A reasonable compromise for low loss and high remanence was reached at a thickness of 7 mu m, with a remanence ratio of 0.84 and a 59 GHz peak-to-peak derivative linewidth of 250 Oe. The 20 mu m thick film had a linewidth of 110 Oe, one of the smallest values ever obtained for IPCA BaM films. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.3010374]