Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

出版年份 2008 全文链接

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作者

关键词

出版物

Volume 93, Issue 5, Pages 053504

出版商

AIP Publishing

发表日期

2008-08-08

DOI

10.1063/1.2969282

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