Review
Chemistry, Multidisciplinary
Vivek Saraswat, Robert M. Jacobberger, Michael S. Arnold
Summary: Graphene nanoribbons are promising candidates for future nanoelectronic devices due to their exceptional properties, but face challenges in commercial adoption related to synthesis and devices. Research needs to explore scalable synthetic techniques and dielectric engineering to realize the full potential of GNRs.
Article
Engineering, Electrical & Electronic
Wei Li, Wenyao Liu, Chenxi Liu, Lai Liu, Enbo Xing, Yanru Zhou, Yunbo Shi, Jun Tang, Jun Liu
Summary: With the rapid development of integrated circuits (ICs), temperature-sensing chips with small size and low power consumption will play an important role in the field of IC in the post-Moore era. This article explores the influence of temperature on the electrical characteristics of a field effect transistor (FET) structure based on monolayer-suspended graphene. The experimental results demonstrate that FETs can detect temperature in the range of 30 degrees C to 150 degrees C with a temperature coefficient of resistance (TCR) of 0.51% degrees C-1. The suspended structure effectively suppresses charged impurity scattering and phonon scattering, resulting in a high carrier mobility of 23,000 cm2/Vs at room temperature and atmospheric pressure. The graphene FETs exhibit excellent sensitivity, repeatability, and stability, providing a new approach for temperature sensing chips in the field of IC, while also ensuring low power consumption of the device.
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
(2023)
Article
Chemistry, Physical
Tianye Wei, Hu Li, Yangming Fu, Xiaoxiao Zheng, Long Huang, Aimin Song
Summary: Semiconducting graphene nanoribbons (GNRs) are synthesized by unzipping single-walled carbon nanotubes, and their semiconducting nature is demonstrated by photoluminescence and field-effect transistor tests. The GNR thermoelectric generators (TEGs) exhibit high Seebeck coefficient and power factor at room temperature, showing promise for flexible electronic applications.
Article
Engineering, Electrical & Electronic
Beomjin Jeong, Michael Wuttke, Yazhou Zhou, Klaus Muellen, Akimitsu Narita, Kamal Asadi
Summary: Graphene nanoribbons (GNRs) have great potential for nanoscale devices due to their excellent electrical properties. However, the lack of a facile, nonhazardous, and nondestructive transfer method has hindered their application in large-scale devices. In this study, we developed a simple acid (HF)-free transfer method to fabricate field-effect transistors (FETs) with a monolayer composed of a random network of GNRs. The resulting GNR-FETs exhibited excellent FET characteristics and allowed for the demonstration of the first GNR-based nonvolatile memory. This process provides a simple route for the utilization of GNRs in various optoelectronic devices.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Beomjin Jeong, Michael Wuttke, Yazhou Zhou, Klaus Muellen, Akimitsu Narita, Kamal Asadi
Summary: Graphene nanoribbons (GNRs) have great potential for nanoscale devices due to their excellent electrical properties. However, their application in large-scale devices is challenging due to the lack of a convenient, nonhazardous, and nondestructive transfer method. Researchers have developed a simple acid-free transfer method for fabricating field-effect transistors (FETs) with a random network of GNRs. The resulting GNR-FETs exhibit excellent FET characteristics and can be used for nonvolatile memory, providing a simple route for GNRs in various optoelectronic devices.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Ruolan Wen, Zhenhong Jiang, Rui Miao, Lei Wang, Yujian Liang, Jingui Deng, Qingyi Shao, Jian Zhang
Summary: Based on the Density functional theory (DFT) combined with non-equilibrium Green's function (NEGF), the potential application of boron, nitrogen and phosphorus co-doped seven-atom-wide armchair graphene nanoribbons field effect transistor (7-AGNR-FET) was investigated. The gate voltage can modulate the electronic transport properties, and the device shows good working behavior with positive drain voltage. Negative gate voltage leads to negative differential resistance effect.
DIAMOND AND RELATED MATERIALS
(2022)
Review
Physics, Condensed Matter
Tahereh Radsar, Hassan Khalesi, Vahid Ghods
Summary: The downsizing of silicon-based transistors has led to significant advancements in the electronic industry, but also brought about limitations and challenges in transistor performance. In response to the near-end state of silicon technology, novel material innovations are required, with graphene emerging as a promising candidate for silicon channel replacement. Through research and simulation on graphene and graphene nanoribbons, it has been shown that graphene-based transistors are an excellent alternative to silicon-based transistors.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Chemistry, Multidisciplinary
Jian Zhang, Gabriela Borin Barin, Roman Furrer, Cheng-Zhuo Du, Xiao-Ye Wang, Klaus Muellen, Pascal Ruffieux, Roman Fasel, Michel Calame, Mickael L. Perrin
Summary: Bottom-up synthesized graphene nanoribbons (GNRs) are of interest due to their atomically controlled structure and customizable physical properties. However, understanding the relationship between cryogenic charge transport and the number of GNRs in a device is challenging due to lack of precise control over GNR length and location.
Article
Chemistry, Multidisciplinary
Prapti Kafle, Siyuan Huang, Kyung Sun Park, Fengjiao Zhang, Hao Yu, Caroline E. Kasprzak, Hyunchul Kim, Charles M. Schroeder, Arend M. van der Zande, Ying Diao
Summary: The interaction between graphene and conjugated polymers plays a crucial role in the design of hybrid electronics. In this study, we found that graphene can strongly interact with PII-2T, resulting in higher fiber density, film coverage, crystallinity, and polymer alignment of the monolayer films. Spectroscopic analysis confirmed the existence of organic-electronic interactions at the graphene-polymer interface. These findings provide valuable insights into the graphene-polymer interactions at the nanoscopic interfaces and their impact on multiscale morphology, which can aid in the design of efficient graphene-organic hybrid electronics.
Article
Multidisciplinary Sciences
Jie Li, Junrong Zhang, Junwei Chu, Liu Yang, Xinxin Zhao, Yan Zhang, Tong Liu, Yang Lu, Chen Chen, Xingang Hou, Long Fang, Yijun Xu, Junyong Wang, Kai Zhang
Summary: Through the physical vapor deposition strategy, controllable synthesis of horizontal tellurium nanoribbon arrays on mica substrates with an angular interval of 60 degrees is achieved. The growth of tellurium nanoribbons is driven by the quasi-one-dimensional spiral chain structure and the epitaxy relationship between tellurium and mica. The bending of the nanoribbons, induced by grain boundary, is a new phenomenon. Field-effect transistors based on tellurium nanoribbons demonstrate high mobility and on/off ratio.
Article
Chemistry, Multidisciplinary
Wenyu Zhao, Hongyuan Li, Xiao Xiao, Yue Jiang, Kenji Watanabe, Takashi Taniguchi, Alex Zettl, Feng Wang
Summary: Graphene nanoribbons with low edge roughness fabricated using dry lithography method support low-loss and tunable plasmonic waveguide modes, which were observed using cryogenic infrared nanoscopy and can be adjusted through electrostatic gating.
Article
Chemistry, Multidisciplinary
Sangheon Jeon, Pyunghwa Han, Jeonghwa Jeong, Wan Sik Hwang, Suck Won Hong
Summary: In this study, a facile and effective method for fabricating highly aligned arrays of graphene nanoribbons was explored using orientationally controlled electrospun polymeric nanowire etch-mask. By manipulating the process parameters, the size, morphology, and width of the nanowires could be easily controlled, leading to improved performance in field-effect transistors with a relatively higher current on-off ratio compared to traditional methods.
Article
Nanoscience & Nanotechnology
Shaorui Li, Chenglin Yu, Yongchao Wang, Ke Zhang, Kaili Jiang, Yayu Wang, Jinsong Zhang
Summary: This study investigates the control of switching time in electrochemical graphene FETs and finds that it can be systematically controlled by applied gate voltages and geometries of graphene channels. The turn-on and turn-off time show an exponential dependence on the gate voltages, indicating the dominant Tafel-form kinetics of hydrogenation reaction in a two-dimensional limit. Additionally, the turn-off time is inversely proportional to the channel width but independent of the length, while the turn-on time relies on both the width and length, as well as the off-state gate voltage and duration.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Condensed Matter
Sofia Sanz, Nick Papior, Geza Giedke, Daniel Sanchez-Portal, Mads Brandbyge, Thomas Frederiksen
Summary: We theoretically study electron interference in a Mach-Zehnder-like geometry formed by four parallel pairs of zigzag graphene nanoribbons. By adjusting the interribbon separation, each intersection can function as an electron beam splitter or mirror, allowing for tuneable circuitry with interfering pathways. We evaluate the electron transport properties of these eight-terminal devices and identify pairs of terminals subject to self-interference. The proposed devices have potential applications as magnetic field sensors, detectors of phase shifts induced by local scatterers, and for the study of quantum entanglement.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2023)
Article
Engineering, Electrical & Electronic
Chenkang Rui, Cheng Shao, Jiaxu Liu, Aqing Chen, Kaigui Zhu, Qingyi Shao
Summary: In this study, we investigated the transport properties of a 2.55 nm graphene nanoribbon field-effect transistor using first principle methods. The gate voltage effectively controlled the drain current, which increased linearly with positive bias voltage and exhibited negative differential resistance under negative bias voltage. The device shows potential for applications in memory devices, oscillators, and fast switching devices.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Chemistry, Analytical
Yuqiong Sun, Jiean Li, Daowei He, Xinran Wang, Yi Shi, Lijia Pan
Summary: This review summarizes different types of gas sensors based on carbon dots (CDs), including optical gas sensors, electrical gas sensors, and quartz crystal microbalance sensors. CDs exhibit strong light absorption and tunable photoluminescence, making them effective tools for optical sensing applications. The sensors involving CDs show promising performances in gas sensing, with improved sensitivity.
Article
Physics, Multidisciplinary
Yanting Chen, Hongkai Ning, Yue Kuang, Xing-Xing Yu, He-He Gong, Xuanhu Chen, Fang-Fang Ren, Shulin Gu, Rong Zhang, Youdou Zheng, Xinran Wang, Jiandong Ye
Summary: Ferroelectric-semiconductor heterostructures provide an alternative strategy for manipulating polarization towards advanced devices. This work focuses on the heteroepitaxial construction, band structure alignment, and polarization engineering of the kappa-Ga2O3/GaN ferroelectric/polar heterojunction. The findings of this study have implications for the rational design of ferroelectric/polar heterojunctions for applications in power electronic devices, advanced memories, and ultra-low loss negative capacitance transistors.
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
(2022)
Article
Multidisciplinary Sciences
Yi Wan, En Li, Zhihao Yu, Jing-Kai Huang, Ming-Yang Li, Ang-Sheng Chou, Yi-Te Lee, Chien-Ju Lee, Hung-Chang Hsu, Qin Zhan, Areej Aljarb, Jui-Han Fu, Shao-Pin Chiu, Xinran Wang, Juhn-Jong Lin, Ya-Ping Chiu, Wen-Hao Chang, Han Wang, Yumeng Shi, Nian Lin, Yingchun Cheng, Vincent Tung, Lain-Jong Li
Summary: Two-dimensional semiconducting monolayers, such as transition metal dichalcogenides (TMDs), have great potential as channel materials in advanced electronics. Innovative growth reactions using hydroxide W species as a metal precursor show significantly lower defect density compared to conventional chemical vapor deposition (CVD) methods. Field-effect transistor (FET) devices based on this growth method exhibit high electron mobility and on-state current, comparable to exfoliated flakes, indicating the industrial potential of 2D materials.
NATURE COMMUNICATIONS
(2022)
Article
Chemistry, Multidisciplinary
Xiaoqing Chen, Yu Zhang, Ruijuan Tian, Xianghu Wu, Zhengdong Luo, Yan Liu, Xinran Wang, Jianlin Zhao, Xuetao Gan
Summary: A quadratically nonlinear photodetector (QNPD) composed of a van der Waals (vdW) stacked GaSe/InSe heterostructure is reported in this study. The QNPD exhibits unique electronic and optical attributes and extends the photodetection wavelength range from 900 to 1750 nm due to the extra second-harmonic generation (SHG) process in GaSe/InSe. It is highly sensitive to the variation of optical intensity and can be used as an autocorrelator for measuring ultrafast pulse widths and an optoelectronic mixer for signal processing.
Article
Multidisciplinary Sciences
Weisheng Li, Xiaoshu Gong, Zhihao Yu, Liang Ma, Wenjie Sun, Si Gao, Cagil Koroglu, Wenfeng Wang, Lei Liu, Taotao Li, Hongkai Ning, Dongxu Fan, Yifei Xu, Xuecou Tu, Tao Xu, Litao Sun, Wenhui Wang, Junpeng Lu, Zhenhua Ni, Jia Li, Xidong Duan, Peng Wang, Yuefeng Nie, Hao Qiu, Yi Shi, Eric Pop, Jinlan Wang, Xinran Wang
Summary: By hybridizing with semi-metallic antimony (0112) through strong van der Waals interactions, the electrical contact of monolayer molybdenum disulfide is improved, meeting the requirements for the development of next-generation electronics.
Article
Engineering, Electrical & Electronic
Chen Luo, Tao Xu, Zhihao Yu, Xinran Wang, Litao Sun, Junhao Chu, Xing Wu
Summary: Layered materials offer potential solutions for insulators in 2-D electronics, but their sub-nanometer thickness and complex interface states present challenges for their study. Transmission electron microscopy is a powerful tool for analyzing their morphology, chemical composition, crystal structure, and electronic structure.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Nanoscience & Nanotechnology
Hongkai Ning, Zhihao Yu, Qingtian Zhang, Hengdi Wen, Bin Gao, Yun Mao, Yuankun Li, Ying Zhou, Yue Zhou, Jiewei Chen, Lei Liu, Wenfeng Wang, Taotao Li, Yating Li, Wanqing Meng, Weisheng Li, Yun Li, Hao Qiu, Yi Shi, Yang Chai, Huaqiang Wu, Xinran Wang
Summary: A duplex device structure based on a ferroelectric field-effect transistor and an atomically thin MoS2 channel was developed, enabling a universal in-memory computing architecture for in situ learning. The device exhibited excellent performance in endurance, retention, speed, and energy consumption. It can be integrated with silicon circuitry to provide a hardware solution for general edge intelligence.
NATURE NANOTECHNOLOGY
(2023)
Article
Computer Science, Information Systems
Hongkai Ning, Zhihao Yu, Taotao Li, Haoliang Shen, Gen Long, Yi Shi, Xinran Wang
Summary: The article reviews the progress in material synthesis, device engineering, and integration technologies for integrated circuits based on 2D materials. It outlines the challenges and important milestones on the roadmap for the next decade towards the fab adoption of 2D materials. Key metrics and enablers such as performance, power, area, cost, and equipment for further technology development in this area are proposed.
SCIENCE CHINA-INFORMATION SCIENCES
(2023)
Article
Chemistry, Multidisciplinary
Chi Zhang, Jing Ning, Wei Lu, Boyu Wang, Xuan Cui, Xiaoxiao Zhu, Xue Shen, Xin Feng, Yanbo Wang, Dong Wang, Xinran Wang, Jincheng Zhang, Yue Hao
Summary: The development of electronic nanodevices with low energy consumption is crucial in the era of big data for their application in analog computing. A miniaturized diode based on N-n MoS2 homojunction has been developed, which can switch between type-I and type-II based on bandgap renormalization effect. This device demonstrates rectification, nonvolatile characteristic, high optical responsiveness, and energy efficiency. It has a rectification ratio of 10(3) and can retain memory for at least 7000 s. As a synapse simulator, it consumes ultralow-level energy and can simulate visual cells.
Article
Materials Science, Multidisciplinary
Tianhong Chen, Long Xiao, Yuan Liu, Junzhuan Wang, Xinran Wang, Xiaomu Wang, Shancheng Yan, Yi Shi
Summary: By constructing PdSe2-based graphene-sandwiched vertical devices, high photovoltaic efficiency can be achieved. This structure effectively reduces carrier recombination and enhances the built-in field and photovoltaic effect by controlling the Fermi level and carrier density. This work provides an efficient scheme for the design of high-efficiency 2D material photovoltaic devices.
ADVANCED OPTICAL MATERIALS
(2023)
Review
Materials Science, Multidisciplinary
Zhibin Zhang, Stiven Forti, Wanqing Meng, Sergio Pezzini, Zehua Hu, Camilla Coletti, Xinran Wang, Kaihui Liu
Summary: Two-dimensional (2D) materials have garnered extensive research attention due to their intriguing physical properties and potential applications in electronics and optoelectronics. This review provides an in-depth analysis of the growth and applications of 2D materials, focusing on single crystals. The review covers growth strategies for monolayer and multilayer single crystals, as well as their use in electronic and optoelectronic devices.
Article
Chemistry, Multidisciplinary
Guoteng Ma, Wanfu Shen, Daniel Soy Sanchez, Yu Yu, Han Wang, Lidong Sun, Xinran Wang, Chunguang Hu
Summary: The universal existence of topologically protected phase singularities (PSs) generated from exciton resonances of single-atom layers is demonstrated. By coating TMDC monolayers on a transparent substrate, PSs with zero reflection and perfect Heaviside phase jump can be achieved, enabling highly sensitive biosensing capabilities.
Article
Engineering, Electrical & Electronic
Yimeng Sang, Dongqi Zhang, Zhe Zhuang, Junchi Yu, Feifan Xu, Di Jiang, Ke Wang, Tao Tao, Xinran Wang, Rong Zhang, Bin Liu
Summary: In this study, we demonstrated the monolithic integration of GaN-based driving MOSFET on micro-LEDs by regrowing a hybrid tunnel junction on top of a commercial green LED wafer. The hybrid tunnel junction served as the current spreading layer for the micro-LEDs and the n/p/n structure of the LED + TJ stack could be utilized for fabricating a quasi-vertical driving MOSFET. By modulating the gate supply voltage, the MOSFET effectively controlled the injection current of the micro-LED, allowing for precise modulation of its output performance.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Tangxin Li, Jinshui Miao, Xiao Fu, Bo Song, Bin Cai, Xun Ge, Xiaohao Zhou, Peng Zhou, Xinran Wang, Deep Jariwala, Weida Hu
Summary: Researchers have demonstrated a neuromorphic photovoltaic detector in a neural network that has highly tunable responsivity and can simultaneously store image data in a non-volatile manner, representing a transformative leap in compactness and function of visual perception hardware.
NATURE NANOTECHNOLOGY
(2023)
Review
Chemistry, Multidisciplinary
Tiange Zhao, Jiaxiang Guo, Taotao Li, Zhen Wang, Meng Peng, Fang Zhong, Yue Chen, Yiye Yu, Tengfei Xu, Runzhang Xie, Pingqi Gao, Xinran Wang, Weida Hu
Summary: The fabrication of large-area two-dimensional (2D) materials is crucial for their industrial applications, and chemical vapor deposition (CVD) is a promising method for producing high-quality films at scale. Recent advances in epitaxial growth of large-area single-crystalline graphene, hexagonal boron nitride, and transition-metal dichalcogenides have emphasized the importance of substrate engineering in terms of lattice orientation, surface steps, and energy considerations. This review focuses on the current strategies and underlying mechanisms, and discusses future directions in epitaxial substrate engineering for wafer-scale integration of 2D materials in electronics and photonics.
CHEMICAL SOCIETY REVIEWS
(2023)
