Uniform Low-to-High In Composition InGaN Layers Grown on Si

First Demonstration of Direct Growth of Planar High-In-Composition InGaN Layers on Si

(2013) Praveen Kumar et al.   Applied Physics Express

Near-infrared InN quantum dots on high-In composition InGaN

(2013) Paul E. D. Soto Rodriguez et al.   APPLIED PHYSICS LETTERS

Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots

(2012) N. H. Alvi et al.   APPLIED PHYSICS LETTERS

A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy

(2012) Ž. Gačević et al.   JOURNAL OF CRYSTAL GROWTH

Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

(2011) S. Albert et al.   APPLIED PHYSICS LETTERS

Growth of Vertically Aligned InGaN Nanorod Arrays on p-Type Si Substrates for Heterojunction Diodes

(2010) Kemin Wu et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Determination of the composition of InxGa1−xN from strain measurements

(2009) F.M. Morales et al.   ACTA MATERIALIA

Band bending at the surfaces of In-rich InGaN alloys

(2008) L. R. Bailey et al.   JOURNAL OF APPLIED PHYSICS

Modeling of InGaN/Si tandem solar cells

(2008) L. Hsu et al.   JOURNAL OF APPLIED PHYSICS