4.5 Article

High-Performance Spin-Polarized Photocathodes Using a GaAs/GaAsP Strain-Compensated Superlattice

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APPLIED PHYSICS EXPRESS
卷 6, 期 1, 页码 -

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IOP PUBLISHING LTD
DOI: 10.7567/APEX.6.015801

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  1. Japan Society for the Promotion of Science (JSPS)
  2. Japan Science and Technology Agency
  3. Grants-in-Aid for Scientific Research [23246003] Funding Source: KAKEN

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Optimized transmission-type photocathodes with a GaAs/GaAsP strain-compensated superlattice were developed. The strain-compensated superlattice structures were of high crystal quality, and electron beams from the photocathodes had a maximum spin polarization of 92% and a quantum efficiency of 0.4% without an antireflection coating. The strain-compensated superlattice structure effectively prevented strain relaxation, and the high spin polarization was maintained up to a superlattice layer thickness of 300 nm. Increasing the superlattice layer thickness effectively improved the quantum efficiency while keeping the super high-brightness. (C) 2013 The Japan Society of Applied Physics

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